Reference Type | Journal (article/letter/editorial) |
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Title | Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam Epitaxy |
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Journal | Japanese Journal of Applied Physics |
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Authors | Okuyama, Hiroyuki | Author |
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Nakano, Kazushi | Author |
Miyajima, Takao | Author |
Akimoto, Katsuhiro | Author |
Year | 1991 (September 15) | Volume | 30 |
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Publisher | Japan Society of Applied Physics |
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DOI | doi:10.1143/jjap.30.l1620Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 14996840 | Long-form Identifier | mindat:1:5:14996840:1 |
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GUID | 0 |
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Full Reference | Okuyama, Hiroyuki, Nakano, Kazushi, Miyajima, Takao, Akimoto, Katsuhiro (1991) Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1620 |
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Plain Text | Okuyama, Hiroyuki, Nakano, Kazushi, Miyajima, Takao, Akimoto, Katsuhiro (1991) Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1620 |
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In | (1991) Japanese Journal of Applied Physics Vol. 30. Japan Society of Applied Physics |
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