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Suemasu, Takashi, Miyamoto, Yasuyuki, Furuya, Kazuhito (1991) Improvement of Organometallic Vapor Phase Epitaxy Regrown GaInAs/InP Heterointerface by Surface Treatment. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1702

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Reference TypeJournal (article/letter/editorial)
TitleImprovement of Organometallic Vapor Phase Epitaxy Regrown GaInAs/InP Heterointerface by Surface Treatment
JournalJapanese Journal of Applied Physics
AuthorsSuemasu, TakashiAuthor
Miyamoto, YasuyukiAuthor
Furuya, KazuhitoAuthor
Year1991 (October 1)Volume30
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.30.l1702Search in ResearchGate
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Mindat Ref. ID14996868Long-form Identifiermindat:1:5:14996868:5
GUID0
Full ReferenceSuemasu, Takashi, Miyamoto, Yasuyuki, Furuya, Kazuhito (1991) Improvement of Organometallic Vapor Phase Epitaxy Regrown GaInAs/InP Heterointerface by Surface Treatment. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1702
Plain TextSuemasu, Takashi, Miyamoto, Yasuyuki, Furuya, Kazuhito (1991) Improvement of Organometallic Vapor Phase Epitaxy Regrown GaInAs/InP Heterointerface by Surface Treatment. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1702
In(1991) Japanese Journal of Applied Physics Vol. 30. Japan Society of Applied Physics

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Miyamoto, Yasuyuki, Hirayama, Hideki, Suemasu, Takashi, Miyake, Yasunari, Arai, Shigehisa (1991) Improvement of Regrown Interface in InP Organo-Metallic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l672
Takemura, Riichiro, Suhara, Michihiko, Oobo, Takashi, Miyamoto, Yasuyuki, Furuya, Kazuhito (1997) Characterization of GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy for High-Temperature Estimation of Phase Coherent Length of Electrons. Japanese Journal of Applied Physics, 36. 1846-1848 doi:10.1143/jjap.36.1846
Oobo, Takashi, Takemura, Riichiro, Sato, Ken, Suhara, Michihiko, Miyamoto, Yasuyuki, Furuya, Kazuhito (1998) Effect of Spacer Layer Thickness on Energy Level Width Narrowing in GaInAs/InP Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 37. 445-449 doi:10.1143/jjap.37.445
Ishihara, Kanji, Kinoshita, Satoru, Furuya, Kazuhito, Miyamoto, Yasuyuki, Uesaka, Katsumi, Miyauchi, Motoya (1987) GaInAs/InP Hot Electron Transistors Grown by OMVPE. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l911
Sekiguchi, Tomonori, Miyamoto, Yasuyuki, Furuya, Kazuhito (1993) Influence of Impurities on the Performance of Doped-Well GaInAs/InP Resonant Tunneling Diodes. Japanese Journal of Applied Physics, 32. doi:10.1143/jjap.32.l243
Kokubo, Atsushi, Hattori, Tetsuya, Hongo, Hiroo, Suhara, Michihiko, Miyamoto, Yasuyuki, Furuya, Kazuhito (1998) A 25-nm-pitch GaInAs/InP Buried Structure Using Calixarene Resist. Japanese Journal of Applied Physics, 37. doi:10.1143/jjap.37.l827
Arai, Toshiki, Yamagami, Shigeharu, Miyamoto, Yasuyuki, Furuya, Kazuhito (2001) Reduction of Base-Collector Capacitance in Submicron InP/GaInAs Heterojunction Bipolar Transistors with Buried Tungsten Wires. Japanese Journal of Applied Physics, 40. doi:10.1143/jjap.40.l735
Morita, Tatsuo, Arai, Toshiki, Nagatsuka, Hiromi, Miyamoto, Yasuyuki, Furuya, Kazuhito (2002) Fabrication of InP/GaInAs Double Heterojunction Bipolar Transistors with a 0.1-µm-Wide Emitter. Japanese Journal of Applied Physics, 41. doi:10.1143/jjap.41.l121
Oobo, Takashi, Takemura, Riichiro, Suhara, Michihiko, Miyamoto, Yasuyuki, Furuya, Kazuhito (1997) High Peak-to-Valley Current Ratio GaInAs/GaInP Resonant Tunneling Diodes. Japanese Journal of Applied Physics, 36. 5079-5080 doi:10.1143/jjap.36.5079
Miyamoto, Yasuyuki, Cao, Ming, Furuya, Kazuhito, Suematsu, Yasuharu (1987) GaInAsP/InP Single Quantum-Well Lasers by OMVPE. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l176
Furuya, Kazuhito (1991) Coherent Electron Devices. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l82
 
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