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Koukitu, Akinori, Ikeda, Hitoshi, Suzuki, Hiroshi, Seki, Hisashi (1991) In SituMonitoring of Surface Kinetics in GaAs Atomic Layer Epitaxy by Surface Photo-Absorption Method. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1712

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Reference TypeJournal (article/letter/editorial)
TitleIn SituMonitoring of Surface Kinetics in GaAs Atomic Layer Epitaxy by Surface Photo-Absorption Method
JournalJapanese Journal of Applied Physics
AuthorsKoukitu, AkinoriAuthor
Ikeda, HitoshiAuthor
Suzuki, HiroshiAuthor
Seki, HisashiAuthor
Year1991 (October 1)Volume30
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.30.l1712Search in ResearchGate
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Mindat Ref. ID14996871Long-form Identifiermindat:1:5:14996871:5
GUID0
Full ReferenceKoukitu, Akinori, Ikeda, Hitoshi, Suzuki, Hiroshi, Seki, Hisashi (1991) In SituMonitoring of Surface Kinetics in GaAs Atomic Layer Epitaxy by Surface Photo-Absorption Method. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1712
Plain TextKoukitu, Akinori, Ikeda, Hitoshi, Suzuki, Hiroshi, Seki, Hisashi (1991) In SituMonitoring of Surface Kinetics in GaAs Atomic Layer Epitaxy by Surface Photo-Absorption Method. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1712
In(1991) Japanese Journal of Applied Physics Vol. 30. Japan Society of Applied Physics

See Also

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Koukitu, Akinori, Ikeda, Hitoshi, Yasutake, Hiroshi, Seki, Hisashi (1991) In SituGravimetric Monitoring of the GaAs Growth Process in Atomic Layer Epitaxy. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1847
Koukitu, Akinori, Takahashi, Naoyuki, Miura, Yoshiki, Seki, Hisashi (1994) Determination of Surface Chemical Species in GaAs Atomic Layer Epitaxy by In Situ Gravimetric Monitoring. Japanese Journal of Applied Physics, 33. doi:10.1143/jjap.33.l613
Koukitu, Akinori, Ikeda, Hitoshi, Miyazawa, Takayuki, Seki, Hisashi (1992) Growth and Thermodynamic Analysis of Atomic Layer Epitaxy of ZnSxSe1-x. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l1463
Ikeda, Hitoshi, Kamisawa, Masaru, Koukitu, Akinori, Seki, Hisashi (1990) Growth of GaAs by Cold-Wall Metalorganic-Chloride Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l2149
Koukitu, Akinori, Saegusa, Akihiko, Kitho, Masanori, Ikeda, Hitoshi, Seki, Hisashi (1990) Atmospheric Pressure Atomic Layer Epitaxy of ZnSe Using Zn and H2Se. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l2165
Koukitu, Akinori, Taki, Tetsuya, Takahashi, Naoyuki, Seki, Hisashi (1996) In Situ Monitoring of the Chemisorption of Hydrogen Atoms on (001) GaAs Surface in GaAs Atomic Layer Epitaxy. Japanese Journal of Applied Physics, 35. doi:10.1143/jjap.35.l710
Taki, Tetsuya, Narita, Koji, Koukitu, Akinori, Seki, Hisashi (1998) Investigation of Arsenic Desorption from GaAs(111)B Surface in Atmospheric Pressure Atomic Layer Epitaxy. Japanese Journal of Applied Physics, 37. doi:10.1143/jjap.37.l1367
Takahashi, Naoyuki, Yagi, Minoru, Koukitu, Akinori, Seki, Hisashi (1993) In SituObservation of Halogen-Transport Atomic Layer Epitaxy of GaAs in Inert Carrier Gas System. Japanese Journal of Applied Physics, 32. doi:10.1143/jjap.32.l1277
Koukitu, Akinori, Nakai, Hideo, Saegusa, Akihiko, Suzuki, Takeyuki, Nomura, Okio, Seki, Hisashi (1988) Solid Composition of In1-xGaxAs Grown by the Halogen Transport Atomic Layer Epitaxy. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l744
Koukitu, Akinori, Kumagai, Yoshinao, Taki, Tetsuya, Seki, Hisashi (1999) Halogen-Transport Atomic-Layer Epitaxy of Cubic GaN Monitored byIn SituGravimetric Method. Japanese Journal of Applied Physics, 38. 4980-4982 doi:10.1143/jjap.38.4980
Ikeda, Hitoshi, Miura, Yoshiki, Takahashi, Naoyuki, Koukitu, Akinori, Seki, Hisashi (1994) Substitution of surface-adsorbed As atoms to P atoms in atomic layer epitaxy. Applied Surface Science, 82. 257-262 doi:10.1016/0169-4332(94)90225-9
 
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