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Ohmori, Yutaka, Takahashi, Hiroyuki, Muro, Keiro, Uchida, Masao, Kawai, Tsuyoshi, Yoshino, Katsumi (1991) Gas-Sensitive Schottky Gated Field Effect Transistors Utilizing Poly(3-alkylthiophene) Films. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1778

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Reference TypeJournal (article/letter/editorial)
TitleGas-Sensitive Schottky Gated Field Effect Transistors Utilizing Poly(3-alkylthiophene) Films
JournalJapanese Journal of Applied Physics
AuthorsOhmori, YutakaAuthor
Takahashi, HiroyukiAuthor
Muro, KeiroAuthor
Uchida, MasaoAuthor
Kawai, TsuyoshiAuthor
Yoshino, KatsumiAuthor
Year1991 (October 1)Volume30
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.30.l1778Search in ResearchGate
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Mindat Ref. ID14996892Long-form Identifiermindat:1:5:14996892:0
GUID0
Full ReferenceOhmori, Yutaka, Takahashi, Hiroyuki, Muro, Keiro, Uchida, Masao, Kawai, Tsuyoshi, Yoshino, Katsumi (1991) Gas-Sensitive Schottky Gated Field Effect Transistors Utilizing Poly(3-alkylthiophene) Films. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1778
Plain TextOhmori, Yutaka, Takahashi, Hiroyuki, Muro, Keiro, Uchida, Masao, Kawai, Tsuyoshi, Yoshino, Katsumi (1991) Gas-Sensitive Schottky Gated Field Effect Transistors Utilizing Poly(3-alkylthiophene) Films. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1778
In(1991) Japanese Journal of Applied Physics Vol. 30. Japan Society of Applied Physics

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Ohmori, Yutaka, Takahashi, Hiroyuki, Muro, Keiro, Uchida, Masao, Kawai, Tsuyoshi, Yoshino, Katsumi (1991) Gas-Sensitive Schottky Gated Field Effect Transistors Utilizing Poly(3-alkylthiophene) Films. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1247
Ohmori, Yutaka, Takahashi, Hiroyuki, Muro, Keiro, Uchida, Masao, Kawai, Tsuyoshi, Yoshino, Katsumi (1991) Fabrication and Characteristics of Schottky Gated Poly(3-alkylthiophene) Field Effect Transistors. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l610
Ohmori, Yutaka, Uchida, Masao, Muro, Keiro, Yoshino, Katsumi (1991) Visible-Light Electroluminescent Diodes Utilizing Poly(3-alkylthiophene) Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1938
Ohmori, Yutaka, Uchida, Masao, Muro, Keiro, Yoshino, Katsumi (1991) Blue Electroluminescent Diodes Utilizing Poly(alkylfluorene) Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1941
Ohmori, Yutaka, Takahashi, Hiroyuki, Kawai, Tsuyoshi, Yoshino, Katsumi (1990) Gas-Sensitive Junction Characteristics of Poly(3-alkylthiophene) Schottky Diodes. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l1849
Yoshino, Katsumi, Takahashi, Hiroyuki, Muro, Keiro, Ohmori, Yutaka, Sugimoto, Ryuichi (1991) Optically controlled characteristics of Schottky gated poly(3‐alkylthiophene) field effect transistor. Journal of Applied Physics, 70 (9). 5035-5039 doi:10.1063/1.349008
Ohmori, Yutaka, Muro, Keiro, Yoshino, Katsumi (1993) Gas-sensitive and temperature-dependent Schottky gated field effect transistors utilizing poly(3-alkylthiophene)s. Synthetic Metals, 57 (1). 4111-4116 doi:10.1016/0379-6779(93)90566-f
Ohmori, Yutaka, Muro, Keiro, Onoda, Mitsuyoshi, Yoshino, Katsumi (1992) Fabrication and Characteristics of Schottky Gated Field Effect Transistors Utilizing Poly(1,4-naphthalene vinylene) and Poly(p-phenylene vinylene) Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l646
Ohmori, Yutaka, Manda, Yasuhisa, Takahashi, Hiroyuki, Kawai, Tsuyoshi, Yoshino, Katsumi (1990) Novel Temperature-Dependent Junction Characteristics of Poly(3-alkylthiophene) Schottky Diodes. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l837
Ohmori, Yutaka, Uchida, Masao, Muro, Keiro, Morishima, Chikayoshi, Yoshino, Katsumi (1993) Schottky Gated Field Effect Transistors and Visible Electroluminescent Diodes Utilizing Poly(3-alkylthiophene)s. Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals, 227. 285-294 doi:10.1080/10587259308030982
Ohmori, Yutaka, Morishima, Chikayoshi, Uchida, Masao, Yoshino, Katsumi (1992) Time-Resolved Pulse Response of Electroluminescence in Poly(3-alkylthiophene) Diodes. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l568
 
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