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Samukawa, Seiji (1991) Dependence of Gate Oxide Breakdown Frequency on Ion Current Density Distributions during Electron Cyclotron Resonance Plasma Etching. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1902

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Reference TypeJournal (article/letter/editorial)
TitleDependence of Gate Oxide Breakdown Frequency on Ion Current Density Distributions during Electron Cyclotron Resonance Plasma Etching
JournalJapanese Journal of Applied Physics
AuthorsSamukawa, SeijiAuthor
Year1991 (November 1)Volume30
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.30.l1902Search in ResearchGate
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Mindat Ref. ID14996936Long-form Identifiermindat:1:5:14996936:1
GUID0
Full ReferenceSamukawa, Seiji (1991) Dependence of Gate Oxide Breakdown Frequency on Ion Current Density Distributions during Electron Cyclotron Resonance Plasma Etching. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1902
Plain TextSamukawa, Seiji (1991) Dependence of Gate Oxide Breakdown Frequency on Ion Current Density Distributions during Electron Cyclotron Resonance Plasma Etching. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1902
In(1991) Japanese Journal of Applied Physics Vol. 30. Japan Society of Applied Physics

See Also

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Samukawa, Seiji, Nakagawa, Yukito, Ikeda, Kei (1991) Ion Current Density and Ion Energy Distributions at the Electron Cyclotron Resonance Position in the Electron Cyclotron Resonance Plasma. Japanese Journal of Applied Physics, 30. 423-427 doi:10.1143/jjap.30.423
Samukawa, Seiji, Nakamura, Tsuyoshi (1991) Dependence of Electron Cyclotron Resonance Plasma Characteristics on Magnetic Field Profiles. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1330
Samukawa, Seiji (1991) 400 kHz Radio-Frequency Biased Electron Cyclotron Resonance Position Etching. Japanese Journal of Applied Physics, 30. 3154-3158 doi:10.1143/jjap.30.3154
Samukawa, Seiji, Nakamura, Tsuyoshi (1991) Dependence of Electron Cyclotron Resonance Plasma Characteristics on Magnetic Field Profiles. Japanese Journal of Applied Physics, 30. 3147-3153 doi:10.1143/jjap.30.3147
Samukawa, Seiji, Nakagawa, Yukito, Ikeda, Kei (1990) Ion Energy Distributions at the Electron Cyclotron Resonance Position in Electron Cyclotron Resonance Plasma. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l2319
Samukawa, Seiji, Nakamura, Tsuyoshi, Ishitani, Akihiko (1992) Dependence of Electron Cyclotron Resonance Plasma Characteristics on Introduced Microwave Conditions. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l594
Samukawa, Seiji, Tsukada, Tsutomu (1997) Effects of Discharge Frequency on the Ion-Current Density and Etching Characteristics in High-Density Cl2 Plasmas. Japanese Journal of Applied Physics, 36. doi:10.1143/jjap.36.l1354
Nakagawa, Takahide (1991) Effect of Coating on the Plasma Chamber Wall in RIKEN Electron Cyclotron Resonance Ion Source. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l930
Samukawa, Seiji, Toyosato, Tomohiko, Wani, Etsuo (1991) Low radio frequency biased electron cyclotron resonance plasma etching. Applied Physics Letters, 58 (9). 896-898 doi:10.1063/1.104469
Samukawa, Seiji (1993) Time-Modulated Electron Cyclotron Resonance Plasma Discharge for Controlling the Polymerization in SiO2Etching. Japanese Journal of Applied Physics, 32. 6080-6087 doi:10.1143/jjap.32.6080
Samukawa, Seiji (1994) Highly Selective and Highly AnisotropicSiO2Etching in Pulse-Time Modulated Electron Cyclotron Resonance Plasma. Japanese Journal of Applied Physics, 33. 2133-2138 doi:10.1143/jjap.33.2133
 
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