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Miyazawa, Sei-ichi, Sekiguchi, Yoshinobu, Mizutani, Natsuhiko (1991) Threshold Current Density of GaAs/AlGaAs Single-Quantum-Well Lasers Grown by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1935

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Reference TypeJournal (article/letter/editorial)
TitleThreshold Current Density of GaAs/AlGaAs Single-Quantum-Well Lasers Grown by Molecular Beam Epitaxy
JournalJapanese Journal of Applied Physics
AuthorsMiyazawa, Sei-ichiAuthor
Sekiguchi, YoshinobuAuthor
Mizutani, NatsuhikoAuthor
Year1991 (November 15)Volume30
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.30.l1935Search in ResearchGate
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Mindat Ref. ID14996947Long-form Identifiermindat:1:5:14996947:7
GUID0
Full ReferenceMiyazawa, Sei-ichi, Sekiguchi, Yoshinobu, Mizutani, Natsuhiko (1991) Threshold Current Density of GaAs/AlGaAs Single-Quantum-Well Lasers Grown by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1935
Plain TextMiyazawa, Sei-ichi, Sekiguchi, Yoshinobu, Mizutani, Natsuhiko (1991) Threshold Current Density of GaAs/AlGaAs Single-Quantum-Well Lasers Grown by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1935
In(1991) Japanese Journal of Applied Physics Vol. 30. Japan Society of Applied Physics

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Sekiguchi, Yoshinobu, Miyazawa, Sei-ichi, Mizutani, Natsuhiko (1991) Photoluminescence from GaAs/AlGaAs Quantum Wells Grown at 350°C by Conventional Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1726
Miyazawa, Sei-ichi, Sekiguchi, Yoshinobu (1991) Low-Temperature Molecular Beam Epitaxy Growth of Single Quantum Well GaAs/AlGaAs Lasers. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l921
Yamada, Takeshi, Iga, Ryuzo, Noguchi, Yoshio, Sugiura, Hideo (1991) Low-Threshold InGaAs/InGaAsP Multiple Quantum Well Lasers Grown by Chemical Beam Epitaxy. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1741
Sugimoto, Mitsunori, Hamao, Noboru, Yokoyama, Hiroyuki, Nishi, Kenichi (1991) Indium Composition Dependent Threshold Current Density in Strained InGaAs/AlGaAs Quantum Well Lasers. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l2098
Miyazawa, Sei‐ichi, Sekiguchi, Yoshinobu, Okuda, Masahiro (1993) High‐reliability GaAs/AlGaAs multiquantum well lasers grown at a low temperature (375 °C). Applied Physics Letters, 63 (26). 3583-3585 doi:10.1063/1.110104
Kobayashi, Yasufumi, Egawa, Takashi, Jimbo, Takashi, Umeno, Masayoshi (1991) Selective-Area-Grown AlGaAs/GaAs Single Quantum Well Lasers on Si Substrates by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1781
Sugiura, Hideo, Noguchi, Yoshio, Iga, Ryuzo, Yamada, Takeshi, Yasaka, Hiroshi (1991) In0.53Ga0.47As/InP Multiquantum Well Lasers Grown by Metalorganic Molecular Beam Epitaxy (MOMBE) Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l286
Miyazawa, Sei‐ichi, Sekiguchi, Yoshinobu, Okuda, Masahiro, Hasegawa, Mitsutoshi, Nojiri, Hidetoshi (1993) Continuous wave operation on extremely low‐temperature (375 °C)‐grown AlGaAs quantum‐well lasers. Applied Physics Letters, 62 (6). 624-626 doi:10.1063/1.108876
Hayakawa, Toshiro, Kondo, Masafumi, Suyama, Takahiro, Takahashi, Kosei, Yamamoto, Saburo, Hijikata, Toshiki (1987) Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l302
Kikuchi, Akihiko, Kishino, Katsumi, Kaneko, Yawara (1991) 600 nm-Range GaInP/AlInP Multi-Quantum-Well (MQW) Lasers Grown on Misorientation Substrates by Gas Source Molecular Beam Epitaxy (GS-MBE) Japanese Journal of Applied Physics, 30. 3865-3872 doi:10.1143/jjap.30.3865
Ito, Hiroshi, Harris, James S. (1994) Influence of Dislocations on the Threshold Current Density of AlGaAs/GaAs/InGaAs Strained Quantum-Well Lasers. Japanese Journal of Applied Physics, 33. 6516-6517 doi:10.1143/jjap.33.6516
 
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