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Sato, Kiyotaka, Togura, Kenji (1991) Selective Growth of GaAs/Si by One-Step Low-Pressure Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1964

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Reference TypeJournal (article/letter/editorial)
TitleSelective Growth of GaAs/Si by One-Step Low-Pressure Metalorganic Chemical Vapor Deposition
JournalJapanese Journal of Applied Physics
AuthorsSato, KiyotakaAuthor
Togura, KenjiAuthor
Year1991 (November 15)Volume30
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.30.l1964Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14996958Long-form Identifiermindat:1:5:14996958:3
GUID0
Full ReferenceSato, Kiyotaka, Togura, Kenji (1991) Selective Growth of GaAs/Si by One-Step Low-Pressure Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1964
Plain TextSato, Kiyotaka, Togura, Kenji (1991) Selective Growth of GaAs/Si by One-Step Low-Pressure Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1964
In(1991) Japanese Journal of Applied Physics Vol. 30. Japan Society of Applied Physics

See Also

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Sato, Kiyotaka, Togura, Kenji (1990) One-Step Growth of GaAs Layers on Si Substrates by Low-Pressure MOCVD. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l1735
Sato, Kiyotaka, Togura, Kenji (1993) Growth of GaAs Layers on Si Substrates by One-Step Low-Pressure Metal-Organic Chemical Vapor Deposition without High-Temperature Thermal Cleaning Treatment. Japanese Journal of Applied Physics, 32. 4656-4660 doi:10.1143/jjap.32.4656
Sato, Kiyotaka, Togura, Kenji, Sato, Keiji (1994) Spontaneous Extinction of Twin Surface in GaAs on Si(100) Grown by One-Step Low-Pressure Metal-Organic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 33. 1986-1990 doi:10.1143/jjap.33.1986
Sato, Michio, Weyers, Markus (1991) Adsorption and Decomposition of Organometallics on GaAs Surfaces in Low-Pressure Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1911
Yamaguchi, Ko-ichi, Okamoto, Kotaro (1991) Selective Epitaxial Growth on (100) Vicinal GaAs Surfaces by Atmospheric Pressure-Metalorganic Chemical Vapor Deposition Using Diethylgalliumchloride. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l231
Kobayashi, Yasufumi, Egawa, Takashi, Jimbo, Takashi, Umeno, Masayoshi (1991) Selective-Area-Grown AlGaAs/GaAs Single Quantum Well Lasers on Si Substrates by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1781
Asai, Koyu, Fujita, Kazuhisa, Shiba, Yasunari (1991) The Effects of AsH3Preflow Conditions at Low Temperature on the Morphology of GaAs Buffer Layers for GaAs/Si Grown by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1967
Kurishima, Kenji, Makimoto, Toshiki, Kobayashi, Takashi, Ishibashi, Tadao (1991) InP/InGaAs Heterostructure Bipolar Transistors Grown at Low Temperature by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l258
Soga, Tetsuo, George, Thomas, Jimbo, Takashi, Umeno, Masayoshi (1991) Initial Growth Mechanism for GaAs and GaP on Si Substrate by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 30. 3471-3474 doi:10.1143/jjap.30.3471
Yamauchi, Yoshiharu, Kobayashi, Naoki, Horikoshi, Yoshiji (1991) In SituOptical Observation of Surface Kinetics during GaAs Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l918
Yamaga, Shigeki (1991) Epitaxial ZnS MÏ€S Blue Light Emitting Diode Fabricated on n+-GaAs by Low-Pressure Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 30. 437-441 doi:10.1143/jjap.30.437
 
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