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Ishiwara, Hiroshi, Jyokyu, Katsuyoshi (1991) Formation of Conductive SrVO3Films on Si Substrates. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l2059

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Reference TypeJournal (article/letter/editorial)
TitleFormation of Conductive SrVO3Films on Si Substrates
JournalJapanese Journal of Applied Physics
AuthorsIshiwara, HiroshiAuthor
Jyokyu, KatsuyoshiAuthor
Year1991 (December 1)Volume30
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.30.l2059Search in ResearchGate
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Mindat Ref. ID14996989Long-form Identifiermindat:1:5:14996989:7
GUID0
Full ReferenceIshiwara, Hiroshi, Jyokyu, Katsuyoshi (1991) Formation of Conductive SrVO3Films on Si Substrates. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l2059
Plain TextIshiwara, Hiroshi, Jyokyu, Katsuyoshi (1991) Formation of Conductive SrVO3Films on Si Substrates. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l2059
In(1991) Japanese Journal of Applied Physics Vol. 30. Japan Society of Applied Physics

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Mori, Hiroyuki, Ishiwara, Hiroshi (1991) Epitaxial Growth of SrTiO3Films on Si(100) Substrates Using a Focused Electron Beam Evaporation Method. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1415
Aizawa, Koji, Ishiwara, Hiroshi (1994) Electrical Properties of FerroelectricBaMgF4Films on Si Substrates. Japanese Journal of Applied Physics, 33. 5178-5181 doi:10.1143/jjap.33.5178
Aizawa, Kouji, Ishiwara, Hiroshi (1992) Formation of Ferroelectric BaMgF4Films on GaAs Substrates. Japanese Journal of Applied Physics, 31. 3232-3234 doi:10.1143/jjap.31.3232
Asano, Tanemasa, Ishiwara, Hiroshi, Kaifu, Noriyuki (1983) Heteroepitaxial Growth of Group-IIa-Fluoride Films on Si Substrates. Japanese Journal of Applied Physics, 22. 1474-1481 doi:10.1143/jjap.22.1474
Caber, Jan, Ishiwara, Hiroshi, Furukawa, Seijiro (1982) Solid Phase Epitaxy of Highly-Doped Si: B Films Deposited on Si(100) Substrates. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l712
Ishiwara, Hiroshi, Horita, Susumu (1985) Formation of Shallow p+n Junctions by B-Ion Implantation in Si substrates with Amorphous Layers. Japanese Journal of Applied Physics, 24. 568-573 doi:10.1143/jjap.24.568
Ishiwara, Hiroshi, Orihara, Kouzo, Asano, Tanemasa (1983) Radiation Damage in Epitaxial CaF2Films on Si Substrates by Ar+Ion Implantation. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l458
Asano, Tanemasa, Ishiwara, Hiroshi, Lee, Hee Chul, Tsutsui, Kazuo, Furukawa, Seijiro (1986) Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF2and GaAs. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l139
Singh, Sushil K., Ishiwara, Hiroshi (2005) Reduced Leakage Current in BiFeO3Thin Films on Si Substrates Formed by a Chemical Solution Method. Japanese Journal of Applied Physics, 44. doi:10.1143/jjap.44.l734
Ishiwara, Hiroshi, Suzuki, Kunihiro (1984) Scanning Electron Beam Annealing of P-Ion-Implanted Si(100) and (111) Substrates. Japanese Journal of Applied Physics, 23. 1065-1069 doi:10.1143/jjap.23.1065
Moon, Bum Ki, Ishiwara, Hiroshi (1994) Growth of CrystallineSrTiO3Films on Si Substrates Using Thin Fluoride Buffer Layers and Their Electrical Properties. Japanese Journal of Applied Physics, 33. 5911-5916 doi:10.1143/jjap.33.5911
 
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