Reference Type | Journal (article/letter/editorial) |
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Title | Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InGaAs |
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Journal | Japanese Journal of Applied Physics |
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Authors | Iga, Ryuzo | Author |
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Sugiura, Hideo | Author |
Yamada, Takeshi | Author |
Year | 1991 (January 1) | Volume | 30 |
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Publisher | Japan Society of Applied Physics |
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DOI | doi:10.1143/jjap.30.l4Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 14997079 | Long-form Identifier | mindat:1:5:14997079:4 |
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GUID | 0 |
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Full Reference | Iga, Ryuzo, Sugiura, Hideo, Yamada, Takeshi (1991) Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InGaAs. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l4 |
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Plain Text | Iga, Ryuzo, Sugiura, Hideo, Yamada, Takeshi (1991) Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InGaAs. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l4 |
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In | (1991) Japanese Journal of Applied Physics Vol. 30. Japan Society of Applied Physics |
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