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Sugino, Takashi, Yamamoto, Hiroyuki, Shirafuji, Junji (1991) Hydrogenation of InP by Phosphine Plasma. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l948

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Reference TypeJournal (article/letter/editorial)
TitleHydrogenation of InP by Phosphine Plasma
JournalJapanese Journal of Applied Physics
AuthorsSugino, TakashiAuthor
Yamamoto, HiroyukiAuthor
Shirafuji, JunjiAuthor
Year1991 (June 1)Volume30
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.30.l948Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14997259Long-form Identifiermindat:1:5:14997259:0
GUID0
Full ReferenceSugino, Takashi, Yamamoto, Hiroyuki, Shirafuji, Junji (1991) Hydrogenation of InP by Phosphine Plasma. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l948
Plain TextSugino, Takashi, Yamamoto, Hiroyuki, Shirafuji, Junji (1991) Hydrogenation of InP by Phosphine Plasma. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l948
In(1991) Japanese Journal of Applied Physics Vol. 30. Japan Society of Applied Physics

See Also

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Sugino, Takashi, Yamamoto, Hiroyuki, Sakamoto, Yoshifumi, Ninomiya, Hideaki, Shirafuji, Junji (1991) Effects of Phosphine-Plasma Treatment on Characteristics of Au/n-InP Schottky Junctions. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1439
Ninomiya, Hideaki, Sugino, Takashi, Matsuda, Koichiro, Shirafuji, Junji (1993) Effect of Phosphine on Plasma-Induced Traps in n-InP. Japanese Journal of Applied Physics, 32. doi:10.1143/jjap.32.l12
Sugino, Takashi, Ito, Hiroyuki, Shirafuji, Junji (1990) Formation of InP Metal-Insulator-Semiconductor Schottky Junctions by UV Laser-Induced Photolytic Process of Phosphine Gas. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l1771
Sugino, Takashi, Sakamoto, Yoshifumi, Sumiguchi, Tatsuo, Nomoto, Kuninori, Shirafuji, Junji (1993) Barrier Heights of Schottky Junctions on n-InP Treated with Phosphine Plasma. Japanese Journal of Applied Physics, 32. doi:10.1143/jjap.32.l1196
Sugino, Takashi, Ninomiya, Hideaki, Matsuda, Koichiro, Shirafuji, Junji (1994) Characteristics of Electron Trap Induced in n-InP by Hydrogen Plasma Exposure. Japanese Journal of Applied Physics, 33. doi:10.1143/jjap.33.l267
Sakamoto, Yoshifumi, Sugino, Takashi, Matsuda, Koichiro, Shirafuji, Junji (1995) Effect of Hydrogen Plasma Treatment on n-InP Surfaces. Japanese Journal of Applied Physics, 34. 1417-1424 doi:10.1143/jjap.34.1417
Miyazaki, Takashi, Sugino, Takashi, Matsuda, Koichiro, Shirafuji, Junji (1999) Characterization of InGaAs Phosphidized by a Plasma Process. Japanese Journal of Applied Physics, 38. 1139-1142 doi:10.1143/jjap.38.1139
Hirata, Daiji, Sugino, Takashi, Shirafuji, Junji (1996) Improvement of Dark Current Density of AlInAs/InGaAs Metal-Semiconductor-Metal Photodetector Using Phosphine-Plasma-Treated Schottky Barrier. Japanese Journal of Applied Physics, 35. 1779-1780 doi:10.1143/jjap.35.1779
Sakamoto, Yoshifumi, Sugino, Takashi, address, Hideaki Ninomiya\footnote Present, Corp., Toshiba, Japan., Tokyo, Matsuda, Koichiro, Shirafuji, Junji (1995) Deep Electron Traps in n-InP Induced by Plasma Exposure. Japanese Journal of Applied Physics, 34. 5499-5504 doi:10.1143/jjap.34.5499
Sugino, Takashi, Yamada, Takashi, Matsuda, Koichiro, Shirafuji, Junji (1990) Evidence for Phosphorus Passivation of Plasma-Induced Damage at GaAs Surface Probed by EL2 Traps. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l1575
Sugino, Takashi, Sakamoto, Yoshifumi, Shirafuji, Junji (1993) Schottky Barrier Height of Phosphidized InGaAs. Japanese Journal of Applied Physics, 32. doi:10.1143/jjap.32.l239
 
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