Vote for your favorite mineral in #MinCup25! - Baryte vs. Hematite
It's a heavyweight match between industrial powerhouses as soft #baryte competes against rusty red #hematite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Yoshinobu, Tatsuo, Fuyuki, Takashi, Matsunami, Hiroyuki (1992) Undoped Silicon Layers Grown by Gas Source Molecular Beam Epitaxy Using Si2H6. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l1213

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleUndoped Silicon Layers Grown by Gas Source Molecular Beam Epitaxy Using Si2H6
JournalJapanese Journal of Applied Physics
AuthorsYoshinobu, TatsuoAuthor
Fuyuki, TakashiAuthor
Matsunami, HiroyukiAuthor
Year1992 (September 1)Volume31
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.31.l1213Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14998369Long-form Identifiermindat:1:5:14998369:5
GUID0
Full ReferenceYoshinobu, Tatsuo, Fuyuki, Takashi, Matsunami, Hiroyuki (1992) Undoped Silicon Layers Grown by Gas Source Molecular Beam Epitaxy Using Si2H6. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l1213
Plain TextYoshinobu, Tatsuo, Fuyuki, Takashi, Matsunami, Hiroyuki (1992) Undoped Silicon Layers Grown by Gas Source Molecular Beam Epitaxy Using Si2H6. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l1213
In(1992) Japanese Journal of Applied Physics Vol. 31. Japan Society of Applied Physics

See Also

These are possibly similar items as determined by title/reference text matching only.

Yoshinobu, Tatsuo, Mitsui, Hideaki, Tarui, Yoichiro, Fuyuki, Takashi, Matsunami, Hiroyuki (1992) Cracking of Saturated Hydrocarbon Gas Molecular Beam for Carbonization of Si(001) Surface. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l1580
Yoshinobu, Tatsuo, Fuyuki, Takashi, Matsunami, Hiroyuki (1991) Interface Modification by Hydrocarbon Gas Molecular Beams in Heteroepitaxy of SiC on Si. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1086
Yoshinobu, Tatsuo, Mitsui, Hideaki, Tarui, Yoichiro, Fuyuki, Takashi, Matsunami, Hiroyuki (1992) Heteroepitaxial growth of single crystalline 3Cā€SiC on Si substrates by gas source molecular beam epitaxy. Journal of Applied Physics, 72 (5). 2006-2013 doi:10.1063/1.351628
Yoshinobu, Tatsuo, Mitsui, Hideaki, Izumikawa, Iwao, Fuyuki, Takashi, Matsunami, Hiroyuki (1992) Latticeā€matched epitaxial growth of single crystalline 3Cā€SiC on 6Hā€SiC substrates by gas source molecular beam epitaxy. Applied Physics Letters, 60 (7). 824-826 doi:10.1063/1.107430
Kawamura, Yuichi, Iwamura, Hidetoshi (1992) InP/InAlAs Resonant Tunneling Diodes Grown by Gas Source Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l1733
Hatayama, Tomoaki, Fuyuki, Takashi, Matsunami, Hiroyuki (1996) Time-Resolved Reflection High-Energy Electron Diffraction Analysis in Initial Stage of 3C-SiC Growth on Si(001) by Gas Source Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 35. 5255-5260 doi:10.1143/jjap.35.5255
Morita, Yoshio, Narusawa, Tadashi (1992) Characterization of CuAlS2 Films Grown by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l1396
Fuyuki, Takashi, Nakayama, Michiaki, Yoshinobu, Tatsuo, Shiomi, Hiromu, Matsunami, Hiroyuki (1989) Atomic layer epitaxy of cubic SiC by gas source MBE using surface superstructure. Journal of Crystal Growth, 95 (1). 461-463 doi:10.1016/0022-0248(89)90442-9
Nakamura, Kazuhiro, Fuyuki, Takashi, Matsunami, Hiroyuki (1997) Heavily Sn-doped n-Type InGaP Grown by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 36. 7158-7159 doi:10.1143/jjap.36.7158
Fatt, Yoon Soon (1992) Two-Dimensional Electron Gas Mobility Enhancement in Inverted GaAs/n-AlGaAs Heterostructures Grown by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 31. 2075-2078 doi:10.1143/jjap.31.2075
Yamada, Akira, Kojima, Nobuaki, Takahashi, Kiyoshi, Okamoto, Tamotsu, Konagai, Makoto (1992) Raman Study of Epitaxial Ga2Se3Films Grown by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l186
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Ā© OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833ā€“844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 19, 2025 06:14:14
Go to top of page