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Hayashi, Nobuaki, Kamiyama, Satoshi, Takeuchi, Tetsuya, Iwaya, Motoaki, Amano, Hiroshi, Akasaki, Isamu, Watanabe, Satoshi, Kaneko, Yawara, Yamada, Norihide (2000) Electrical Conductivity of Low-Temperature-Deposited Al0.1Ga0.9N Interlayer. Japanese Journal of Applied Physics, 39. 6493-6495 doi:10.1143/jjap.39.6493

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Reference TypeJournal (article/letter/editorial)
TitleElectrical Conductivity of Low-Temperature-Deposited Al0.1Ga0.9N Interlayer
JournalJapanese Journal of Applied Physics
AuthorsHayashi, NobuakiAuthor
Kamiyama, SatoshiAuthor
Takeuchi, TetsuyaAuthor
Iwaya, MotoakiAuthor
Amano, HiroshiAuthor
Akasaki, IsamuAuthor
Watanabe, SatoshiAuthor
Kaneko, YawaraAuthor
Yamada, NorihideAuthor
Year2000 (December 15)Volume39
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.39.6493Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15014729Long-form Identifiermindat:1:5:15014729:1
GUID0
Full ReferenceHayashi, Nobuaki, Kamiyama, Satoshi, Takeuchi, Tetsuya, Iwaya, Motoaki, Amano, Hiroshi, Akasaki, Isamu, Watanabe, Satoshi, Kaneko, Yawara, Yamada, Norihide (2000) Electrical Conductivity of Low-Temperature-Deposited Al0.1Ga0.9N Interlayer. Japanese Journal of Applied Physics, 39. 6493-6495 doi:10.1143/jjap.39.6493
Plain TextHayashi, Nobuaki, Kamiyama, Satoshi, Takeuchi, Tetsuya, Iwaya, Motoaki, Amano, Hiroshi, Akasaki, Isamu, Watanabe, Satoshi, Kaneko, Yawara, Yamada, Norihide (2000) Electrical Conductivity of Low-Temperature-Deposited Al0.1Ga0.9N Interlayer. Japanese Journal of Applied Physics, 39. 6493-6495 doi:10.1143/jjap.39.6493
In(2000) Japanese Journal of Applied Physics Vol. 39. Japan Society of Applied Physics

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