Sugiyama, Naoharu, Moriyama, Yoshihiko, Tezuka, Tsutomu, Mizuno, Tomohisa, Nakaharai, Shu, Usuda, Koji, Takagi, Sin-ichi (2003) Evaluation of Dislocation Density of SiGe-on-Insulator Substrates using Enhanced Secco Etching Method. Japanese Journal of Applied Physics, 42. 4476-4479 doi:10.1143/jjap.42.4476
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Evaluation of Dislocation Density of SiGe-on-Insulator Substrates using Enhanced Secco Etching Method | ||
| Journal | Japanese Journal of Applied Physics | ||
| Authors | Sugiyama, Naoharu | Author | |
| Moriyama, Yoshihiko | Author | ||
| Tezuka, Tsutomu | Author | ||
| Mizuno, Tomohisa | Author | ||
| Nakaharai, Shu | Author | ||
| Usuda, Koji | Author | ||
| Takagi, Sin-ichi | Author | ||
| Year | 2003 (July 15) | Volume | 42 |
| Publisher | Japan Society of Applied Physics | ||
| DOI | doi:10.1143/jjap.42.4476Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 15020512 | Long-form Identifier | mindat:1:5:15020512:0 |
| GUID | 0 | ||
| Full Reference | Sugiyama, Naoharu, Moriyama, Yoshihiko, Tezuka, Tsutomu, Mizuno, Tomohisa, Nakaharai, Shu, Usuda, Koji, Takagi, Sin-ichi (2003) Evaluation of Dislocation Density of SiGe-on-Insulator Substrates using Enhanced Secco Etching Method. Japanese Journal of Applied Physics, 42. 4476-4479 doi:10.1143/jjap.42.4476 | ||
| Plain Text | Sugiyama, Naoharu, Moriyama, Yoshihiko, Tezuka, Tsutomu, Mizuno, Tomohisa, Nakaharai, Shu, Usuda, Koji, Takagi, Sin-ichi (2003) Evaluation of Dislocation Density of SiGe-on-Insulator Substrates using Enhanced Secco Etching Method. Japanese Journal of Applied Physics, 42. 4476-4479 doi:10.1143/jjap.42.4476 | ||
| In | (2003) Japanese Journal of Applied Physics Vol. 42. Japan Society of Applied Physics | ||
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