Vote for your favorite mineral in #MinCup25! - Kosmochlor vs. Azurite
It's a battle of green vs blue as rare but vibrant chromium-bearing kosmochlor up against the deep blue copper alteration mineral azurite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Saito, Yoshihiro, Nakajima, Shigeru (2003) Effect of Oxygen Plasma on Activation of Implanted Silicon in Gallium Arsenide (II) Japanese Journal of Applied Physics, 42. 5450-5454 doi:10.1143/jjap.42.5450

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleEffect of Oxygen Plasma on Activation of Implanted Silicon in Gallium Arsenide (II)
JournalJapanese Journal of Applied Physics
AuthorsSaito, YoshihiroAuthor
Nakajima, ShigeruAuthor
Year2003 (September 15)Volume42
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.42.5450Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15020747Long-form Identifiermindat:1:5:15020747:6
GUID0
Full ReferenceSaito, Yoshihiro, Nakajima, Shigeru (2003) Effect of Oxygen Plasma on Activation of Implanted Silicon in Gallium Arsenide (II) Japanese Journal of Applied Physics, 42. 5450-5454 doi:10.1143/jjap.42.5450
Plain TextSaito, Yoshihiro, Nakajima, Shigeru (2003) Effect of Oxygen Plasma on Activation of Implanted Silicon in Gallium Arsenide (II) Japanese Journal of Applied Physics, 42. 5450-5454 doi:10.1143/jjap.42.5450
In(2003) Japanese Journal of Applied Physics Vol. 42. Japan Society of Applied Physics

See Also

These are possibly similar items as determined by title/reference text matching only.

Saito, Yoshihiro, Nakajima, Shigeru, Shiga, Nobuo (2003) The Effect of Oxygen Plasma on Activation Efficiency of Implanted Silicon in Gallium Arsenide. Japanese Journal of Applied Physics, 42. 2587-2591 doi:10.1143/jjap.42.2587
Saito, Yoshihiro, Kagiyama, Tomohiro, Nakajima, Shigeru (2003) Effect of Silicon Nitride Cap on the Activation of Implanted Silicon in Gallium Arsenide. Japanese Journal of Applied Physics, 42. 4924-4927 doi:10.1143/jjap.42.4924
Saito, Yoshihiro, Nakajima, Shigeru (2003) Improvement of the Furnace Annealing Process to Suppress Slip Generation in Gallium Arsenide. Japanese Journal of Applied Physics, 42. 389-392 doi:10.1143/jjap.42.389
Saito, Yoshihiro, Nakajima, Shigeru (2003) Threshold Voltage Scattering of Ion Implanted GaAs Metal Semi-Conductor Field Effect Transistors. Japanese Journal of Applied Physics, 42. doi:10.1143/jjap.42.l1495
Saito, Yoshihiro, Nakajima, Shigeru (2003) Hillock Generation on Au Metal in GaAs Metal Semiconductor Field Effect Transistor Fabrication. Japanese Journal of Applied Physics, 42. doi:10.1143/jjap.42.l1305
Saito, Yoshihiro, Kagiyama, Tomohiro, Nakajima, Shigeru (2003) Thermal Expansion and Atomic Structure of Amorphous Silicon Nitride Thin Films. Japanese Journal of Applied Physics, 42. doi:10.1143/jjap.42.l1175
Saito, Yoshihiro, Tosaka, Yasuhiro, Nakajima, Shigeru (2003) Silicon Nitride Final Passivation for GaAs Metal Semi-Conductor Field Effect Transistors (MESFETs) Packaged in Plastic Mold. Japanese Journal of Applied Physics, 42. doi:10.1143/jjap.42.l1391
Hara, Tohru, Gelpey, Jeffrey C. (1987) Capless Rapid Thermal Annealing of Silicon Ion Implanted Gallium Arsenide. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l94
Wada, Takahiro, Tsuji, Kenji, Saito, Takehisa, Matsuo, Yoshihiro (2003) Ferroelectric NaNbO3Ceramics Fabricated by Spark Plasma Sintering. Japanese Journal of Applied Physics, 42. 6110-6114 doi:10.1143/jjap.42.6110
Sato, Takeshi, Takeda, Atsushi, Kimura, Yuki, Suzuki, Hitoshi, Saito, Yoshio, Kaito, Chihiro (2003) Structural Control of Silicon Oxide Particles by Oxygen Partial Pressure in RF Plasma. Japanese Journal of Applied Physics, 42. 5896-5897 doi:10.1143/jjap.42.5896
Teramoto, Iwao (1974) Solid Solubility of Amphoteric Silicon in Gallium Arsenide. Japanese Journal of Applied Physics, 13 (11) 1817-1822 doi:10.1143/jjap.13.1817
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Β© OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 9, 2025 21:19:51
Go to top of page