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Shima, Masaki, Isomura, Masao, Wakisaka, Ken-ichiro, Murata, Kenji, Tanaka, Makoto (2003) High-Rate Deposition of High-Quality Hydrogenated Amorphous Silicon Germanium Using Very High-Frequency Plasma-Enhanced Chemical Vapor Deposition with a High Hydrogen Dilution. Japanese Journal of Applied Physics, 42. 7198-7204 doi:10.1143/jjap.42.7198

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Reference TypeJournal (article/letter/editorial)
TitleHigh-Rate Deposition of High-Quality Hydrogenated Amorphous Silicon Germanium Using Very High-Frequency Plasma-Enhanced Chemical Vapor Deposition with a High Hydrogen Dilution
JournalJapanese Journal of Applied Physics
AuthorsShima, MasakiAuthor
Isomura, MasaoAuthor
Wakisaka, Ken-ichiroAuthor
Murata, KenjiAuthor
Tanaka, MakotoAuthor
Year2003 (December 10)Volume42
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.42.7198Search in ResearchGate
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Mindat Ref. ID15021152Long-form Identifiermindat:1:5:15021152:7
GUID0
Full ReferenceShima, Masaki, Isomura, Masao, Wakisaka, Ken-ichiro, Murata, Kenji, Tanaka, Makoto (2003) High-Rate Deposition of High-Quality Hydrogenated Amorphous Silicon Germanium Using Very High-Frequency Plasma-Enhanced Chemical Vapor Deposition with a High Hydrogen Dilution. Japanese Journal of Applied Physics, 42. 7198-7204 doi:10.1143/jjap.42.7198
Plain TextShima, Masaki, Isomura, Masao, Wakisaka, Ken-ichiro, Murata, Kenji, Tanaka, Makoto (2003) High-Rate Deposition of High-Quality Hydrogenated Amorphous Silicon Germanium Using Very High-Frequency Plasma-Enhanced Chemical Vapor Deposition with a High Hydrogen Dilution. Japanese Journal of Applied Physics, 42. 7198-7204 doi:10.1143/jjap.42.7198
In(2003) Japanese Journal of Applied Physics Vol. 42. Japan Society of Applied Physics

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Shima, Masaki, Isomura, Masao, Maruyama, Eiji, Okamoto, Shingo, Haku, Hisao, Wakisaka, Kenichiro, Kiyama, Seiichi, Tsuda, Shinya (1998) Investigation of Hydrogenated Amorphous Silicon Germanium Fabricated under High Hydrogen Dilution and Low Deposition Temperature Conditions for Stable Solar Cells. Japanese Journal of Applied Physics, 37. 6322-6327 doi:10.1143/jjap.37.6322
Shima, Masaki, Terakawa, Akira, Isomura, Masao, Haku, Hisao, Tanaka, Makoto, Kenichiro Wakisaka, , Kiyama, Seiichi, Tsuda, Shinya (1998) Effects of very high hydrogen dilution at low temperature on hydrogenated amorphous silicon germanium. Journal of Non-Crystalline Solids, 227. 442-446 doi:10.1016/s0022-3093(98)00187-2
Miyajima, Shinsuke, Sawamura, Makoto, Yamada, Akira, Konagai, Makoto (2007) Effects of Hydrogen Dilution Ratio on Properties of Hydrogenated Nanocrystalline Cubic Silicon Carbide Films Deposited by Very High-Frequency Plasma-Enhanced Chemical Vapor Deposition. Japanese Journal of Applied Physics, 46. doi:10.1143/jjap.46.l693
Shima, Masaki, Terakawa, Akira, Isomura, Masao, Tanaka, Makoto, Kiyama, Seiichi, Tsuda, Shinya (1997) Effects of high hydrogen dilution at low temperature on the film properties of hydrogenated amorphous silicon germanium. Applied Physics Letters, 71 (1). 84-86 doi:10.1063/1.119476
Tanaka, Hiroaki, Chuanjie, Zhong, Hayakawa, Yukio, Hirayama, Masaki, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro (2003) High-Quality Silicon Oxide Film Formed by Diffusion Region Plasma Enhanced Chemical Vapor Deposition and Oxygen Radical Treatment Using Microwave-Excited High-Density Plasma. Japanese Journal of Applied Physics, 42. 1911-1915 doi:10.1143/jjap.42.1911
Guo, Lihui, Kondo, Michio, Fukawa, Makoto, Saitoh, Kimihiko, Matsuda, Akihisa (1998) High Rate Deposition of Microcrystalline Silicon Using Conventional Plasma-Enhanced Chemical Vapor Deposition. Japanese Journal of Applied Physics, 37. doi:10.1143/jjap.37.l1116
Matsumura, Hideki (1986) Catalytic Chemical Vapor Deposition (CTC-CVD) Method Producing High Quality Hydrogenated Amorphous Silicon. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l949
Miyajima, Shinsuke, Sawamura, Makoto, Yamada, Akira, Konagai, Makoto (2008) Effect of Plasma Power on Structure of Hydrogenated Nanocrystalline Cubic Silicon Carbide Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition at a Low Substrate Temperature. Japanese Journal of Applied Physics, 47 (5) 3368-3371 doi:10.1143/jjap.47.3368
Huang, Shaoyun, Chen, Kunji, Shi, Jianjun, Huang, Xinfan, Xu, Jun, Ganguly, Gautam, Matsuda, Akihisa (2001) Very High Hydrogen Dilution Induced Novel Phenomena of Electronic Transport Properties in Hydrogenated Microcrystalline Silicon-Germanium Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Method. Japanese Journal of Applied Physics, 40. 40-43 doi:10.1143/jjap.40.40
Yamanaka, Satoshi, Yoshida, Shinichiro, Konagai, Makoto, Takahashi, Kiyoshi (1987) High-Performance Hydrogenated Amorphous Silicon-Germanium Solar Cells Fabricated by Photochemical Vapor Deposition. Japanese Journal of Applied Physics, 26. 1107-1111 doi:10.1143/jjap.26.1107
Koga, Kazunori, Kai, Motohide, Shiratani, Masaharu, Watanabe, Yukio, Shikatani, Nobuhiro (2002) Cluster-Suppressed Plasma Chemical Vapor Deposition Method for High Quality Hydrogenated Amorphous Silicon Films. Japanese Journal of Applied Physics, 41. doi:10.1143/jjap.41.l168
 
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