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Lu, Wen-Tai, Chien, Chao-Hsin, Lan, Wen-Ting, Lee, Tsung-Chieh, Yang, Ming-Jui, Shen, Shih-Wen, Lehnen, Peer, Huang, Tiao-Yuan (2005) Improvements on Electrical Characteristics of p-Channel Metal–Oxide–Semiconductor Field Effect Transistors with HfO2Gate Stacks by Post Deposition N2O Plasma Treatment. Japanese Journal of Applied Physics, 44 (11) 7869-7875 doi:10.1143/jjap.44.7869

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Reference TypeJournal (article/letter/editorial)
TitleImprovements on Electrical Characteristics of p-Channel Metal–Oxide–Semiconductor Field Effect Transistors with HfO2Gate Stacks by Post Deposition N2O Plasma Treatment
JournalJapanese Journal of Applied Physics
AuthorsLu, Wen-TaiAuthor
Chien, Chao-HsinAuthor
Lan, Wen-TingAuthor
Lee, Tsung-ChiehAuthor
Yang, Ming-JuiAuthor
Shen, Shih-WenAuthor
Lehnen, PeerAuthor
Huang, Tiao-YuanAuthor
Year2005 (November 9)Volume44
Issue11
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.44.7869Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15024871Long-form Identifiermindat:1:5:15024871:4
GUID0
Full ReferenceLu, Wen-Tai, Chien, Chao-Hsin, Lan, Wen-Ting, Lee, Tsung-Chieh, Yang, Ming-Jui, Shen, Shih-Wen, Lehnen, Peer, Huang, Tiao-Yuan (2005) Improvements on Electrical Characteristics of p-Channel Metal–Oxide–Semiconductor Field Effect Transistors with HfO2Gate Stacks by Post Deposition N2O Plasma Treatment. Japanese Journal of Applied Physics, 44 (11) 7869-7875 doi:10.1143/jjap.44.7869
Plain TextLu, Wen-Tai, Chien, Chao-Hsin, Lan, Wen-Ting, Lee, Tsung-Chieh, Yang, Ming-Jui, Shen, Shih-Wen, Lehnen, Peer, Huang, Tiao-Yuan (2005) Improvements on Electrical Characteristics of p-Channel Metal–Oxide–Semiconductor Field Effect Transistors with HfO2Gate Stacks by Post Deposition N2O Plasma Treatment. Japanese Journal of Applied Physics, 44 (11) 7869-7875 doi:10.1143/jjap.44.7869
In(2005, November) Japanese Journal of Applied Physics Vol. 44 (11) Japan Society of Applied Physics

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