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Yin, You, Sone, Hayato, Hosaka, Sumio (2006) Finite Element Analysis of Dependence of Programming Characteristics of Phase-Change Memory on Material Properties of Chalcogenides. Japanese Journal of Applied Physics, 45 (11) 8600-8603 doi:10.1143/jjap.45.8600

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Reference TypeJournal (article/letter/editorial)
TitleFinite Element Analysis of Dependence of Programming Characteristics of Phase-Change Memory on Material Properties of Chalcogenides
JournalJapanese Journal of Applied Physics
AuthorsYin, YouAuthor
Sone, HayatoAuthor
Hosaka, SumioAuthor
Year2006 (November 8)Volume45
Issue11
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.45.8600Search in ResearchGate
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Mindat Ref. ID15027218Long-form Identifiermindat:1:5:15027218:4
GUID0
Full ReferenceYin, You, Sone, Hayato, Hosaka, Sumio (2006) Finite Element Analysis of Dependence of Programming Characteristics of Phase-Change Memory on Material Properties of Chalcogenides. Japanese Journal of Applied Physics, 45 (11) 8600-8603 doi:10.1143/jjap.45.8600
Plain TextYin, You, Sone, Hayato, Hosaka, Sumio (2006) Finite Element Analysis of Dependence of Programming Characteristics of Phase-Change Memory on Material Properties of Chalcogenides. Japanese Journal of Applied Physics, 45 (11) 8600-8603 doi:10.1143/jjap.45.8600
In(2006, November) Japanese Journal of Applied Physics Vol. 45 (11) Japan Society of Applied Physics

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Yin, You, Sone, Hayato, Hosaka, Sumio (2006) Simulation of Proposed Confined-Chalcogenide Phase-Change Random Access Memory for Low Reset Current by Finite Element Modelling. Japanese Journal of Applied Physics, 45 (8) 6177-6181 doi:10.1143/jjap.45.6177
Yin, You, Miyachi, Akihira, Niida, Daisuke, Sone, Hayato, Hosaka, Sumio (2006) Electrical Properties of Phase Change and Channel Current Control in Ultrathin Phase-Change Channel Transistor Memory by Annealing. Japanese Journal of Applied Physics, 45 (4) 3238-3242 doi:10.1143/jjap.45.3238
Yin, You, Miyachi, Akihira, Niida, Daisuke, Sone, Hayato, Hosaka, Sumio (2006) A Novel Lateral Phase-Change Random Access Memory Characterized by Ultra Low Reset Current and Power Consumption. Japanese Journal of Applied Physics, 45. doi:10.1143/jjap.45.l726
Yin, You, Sone, Hayato, Hosaka, Sumio (2006) Memory Effect in Metal–Chalcogenide–Metal Structures for Ultrahigh-Density Nonvolatile Memories. Japanese Journal of Applied Physics, 45 (6) 4951-4954 doi:10.1143/jjap.45.4951
Yin, You, Sone, Hayato, Hosaka, Sumio (2005) Dependences of Electrical Properties of Thin GeSbTe and AgInSbTe Films on Annealing. Japanese Journal of Applied Physics, 44 (8) 6208-6212 doi:10.1143/jjap.44.6208
Yin, You, Ota, Kazuhiro, Noguchi, Tomoyuki, Ohno, Hiroki, Sone, Hayato, Hosaka, Sumio (2009) Multilevel Storage in N-Doped Sb2Te3-Based Lateral Phase Change Memory with an Additional Top TiN Layer. Japanese Journal of Applied Physics, 48 (4) 4 doi:10.1143/jjap.48.04c063
Yin, You, Hosaka, Sumio (2012) Low-Reset-Current Ring-Confined-Chalcogenide Phase Change Memory. Japanese Journal of Applied Physics, 51. 104202 doi:10.1143/jjap.51.104202
Yin, You, Noguchi, Tomoyuki, Hosaka, Sumio (2011) Possibility of Freely Achievable Multilevel Storage of Phase-Change Memory by Staircase-Shaped Pulse Programming. Japanese Journal of Applied Physics, 50 (10) 105201 doi:10.1143/jjap.50.105201
Yin, You, Sone, Hayato, Hosaka, Sumio (2007) Characterization of nitrogen-doped Sb2Te3 films and their application to phase-change memory. Journal of Applied Physics, 102 (6). 64503pp. doi:10.1063/1.2778737
Yin, You, Hosaka, Sumio (2012) Controllable Crystallization in Phase-Change Memory for Low-Power Multilevel Storage. Japanese Journal of Applied Physics, 51. 64101 doi:10.1143/jjap.51.064101
Yin, You, Noguchi, Tomoyuki, Hosaka, Sumio (2011) Possibility of Freely Achievable Multilevel Storage of Phase-Change Memory by Staircase-Shaped Pulse Programming. Japanese Journal of Applied Physics, 50 (10) 105201 doi:10.7567/jjap.50.105201
 
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