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Ono, Tetsuo, Takahashi, Hideki, Kinoshita, Keizo, Fujii, Nobutoshi, Hata, Nobuhiro, Kikkawa, Takamaro (2006) Plasma Etch Rates of Porous Silica Low-kFilms with Different Dielectric Constants. Japanese Journal of Applied Physics, 45 (11) 8873-8875 doi:10.1143/jjap.45.8873

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Reference TypeJournal (article/letter/editorial)
TitlePlasma Etch Rates of Porous Silica Low-kFilms with Different Dielectric Constants
JournalJapanese Journal of Applied Physics
AuthorsOno, TetsuoAuthor
Takahashi, HidekiAuthor
Kinoshita, KeizoAuthor
Fujii, NobutoshiAuthor
Hata, NobuhiroAuthor
Kikkawa, TakamaroAuthor
Year2006 (November 8)Volume45
Issue11
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.45.8873Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15027276Long-form Identifiermindat:1:5:15027276:4
GUID0
Full ReferenceOno, Tetsuo, Takahashi, Hideki, Kinoshita, Keizo, Fujii, Nobutoshi, Hata, Nobuhiro, Kikkawa, Takamaro (2006) Plasma Etch Rates of Porous Silica Low-kFilms with Different Dielectric Constants. Japanese Journal of Applied Physics, 45 (11) 8873-8875 doi:10.1143/jjap.45.8873
Plain TextOno, Tetsuo, Takahashi, Hideki, Kinoshita, Keizo, Fujii, Nobutoshi, Hata, Nobuhiro, Kikkawa, Takamaro (2006) Plasma Etch Rates of Porous Silica Low-kFilms with Different Dielectric Constants. Japanese Journal of Applied Physics, 45 (11) 8873-8875 doi:10.1143/jjap.45.8873
In(2006, November) Japanese Journal of Applied Physics Vol. 45 (11) Japan Society of Applied Physics

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