Takakusagi, Satoru, Uosaki, Kohei (2006) Photopatterning of an Organic Monolayer Formed on a Si Single Crystal Surface via Si–C Covalent Bond by UV Irradiation in an Inert Atmosphere. Japanese Journal of Applied Physics, 45 (11) 8961-8966 doi:10.1143/jjap.45.8961
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Photopatterning of an Organic Monolayer Formed on a Si Single Crystal Surface via Si–C Covalent Bond by UV Irradiation in an Inert Atmosphere | ||
Journal | Japanese Journal of Applied Physics | ||
Authors | Takakusagi, Satoru | Author | |
Uosaki, Kohei | Author | ||
Year | 2006 (November 8) | Volume | 45 |
Issue | 11 | ||
Publisher | Japan Society of Applied Physics | ||
DOI | doi:10.1143/jjap.45.8961Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 15027293 | Long-form Identifier | mindat:1:5:15027293:1 |
GUID | 0 | ||
Full Reference | Takakusagi, Satoru, Uosaki, Kohei (2006) Photopatterning of an Organic Monolayer Formed on a Si Single Crystal Surface via Si–C Covalent Bond by UV Irradiation in an Inert Atmosphere. Japanese Journal of Applied Physics, 45 (11) 8961-8966 doi:10.1143/jjap.45.8961 | ||
Plain Text | Takakusagi, Satoru, Uosaki, Kohei (2006) Photopatterning of an Organic Monolayer Formed on a Si Single Crystal Surface via Si–C Covalent Bond by UV Irradiation in an Inert Atmosphere. Japanese Journal of Applied Physics, 45 (11) 8961-8966 doi:10.1143/jjap.45.8961 | ||
In | (2006, November) Japanese Journal of Applied Physics Vol. 45 (11) Japan Society of Applied Physics |
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