Hayakawa, Ryoma, Nakae, Mari, Yoshimura, Takeshi, Ashida, Atsushi, Fujimura, Norifumi, Uehara, Tsuyoshi (2006) Effect of Additional Oxygen on Formation of Silicon Oxynitride Using Nitrogen Plasma Generated near Atmospheric Pressure. Japanese Journal of Applied Physics, 45 (12) 9025-9028 doi:10.1143/jjap.45.9025
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Effect of Additional Oxygen on Formation of Silicon Oxynitride Using Nitrogen Plasma Generated near Atmospheric Pressure | ||
| Journal | Japanese Journal of Applied Physics | ||
| Authors | Hayakawa, Ryoma | Author | |
| Nakae, Mari | Author | ||
| Yoshimura, Takeshi | Author | ||
| Ashida, Atsushi | Author | ||
| Fujimura, Norifumi | Author | ||
| Uehara, Tsuyoshi | Author | ||
| Year | 2006 (December 7) | Volume | 45 |
| Issue | 12 | ||
| Publisher | Japan Society of Applied Physics | ||
| DOI | doi:10.1143/jjap.45.9025Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 15027305 | Long-form Identifier | mindat:1:5:15027305:1 |
| GUID | 0 | ||
| Full Reference | Hayakawa, Ryoma, Nakae, Mari, Yoshimura, Takeshi, Ashida, Atsushi, Fujimura, Norifumi, Uehara, Tsuyoshi (2006) Effect of Additional Oxygen on Formation of Silicon Oxynitride Using Nitrogen Plasma Generated near Atmospheric Pressure. Japanese Journal of Applied Physics, 45 (12) 9025-9028 doi:10.1143/jjap.45.9025 | ||
| Plain Text | Hayakawa, Ryoma, Nakae, Mari, Yoshimura, Takeshi, Ashida, Atsushi, Fujimura, Norifumi, Uehara, Tsuyoshi (2006) Effect of Additional Oxygen on Formation of Silicon Oxynitride Using Nitrogen Plasma Generated near Atmospheric Pressure. Japanese Journal of Applied Physics, 45 (12) 9025-9028 doi:10.1143/jjap.45.9025 | ||
| In | (2006, December) Japanese Journal of Applied Physics Vol. 45 (12) Japan Society of Applied Physics | ||
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