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Na, Kee-Yeol, Kim, Yeong-Seuk (2006) Silicon Complementary Metal–Oxide–Semiconductor Field-Effect Transistors with Dual Work Function Gate. Japanese Journal of Applied Physics, 45 (12) 9033-9036 doi:10.1143/jjap.45.9033

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Reference TypeJournal (article/letter/editorial)
TitleSilicon Complementary Metal–Oxide–Semiconductor Field-Effect Transistors with Dual Work Function Gate
JournalJapanese Journal of Applied Physics
AuthorsNa, Kee-YeolAuthor
Kim, Yeong-SeukAuthor
Year2006 (December 7)Volume45
Issue12
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.45.9033Search in ResearchGate
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Mindat Ref. ID15027307Long-form Identifiermindat:1:5:15027307:5
GUID0
Full ReferenceNa, Kee-Yeol, Kim, Yeong-Seuk (2006) Silicon Complementary Metal–Oxide–Semiconductor Field-Effect Transistors with Dual Work Function Gate. Japanese Journal of Applied Physics, 45 (12) 9033-9036 doi:10.1143/jjap.45.9033
Plain TextNa, Kee-Yeol, Kim, Yeong-Seuk (2006) Silicon Complementary Metal–Oxide–Semiconductor Field-Effect Transistors with Dual Work Function Gate. Japanese Journal of Applied Physics, 45 (12) 9033-9036 doi:10.1143/jjap.45.9033
In(2006, December) Japanese Journal of Applied Physics Vol. 45 (12) Japan Society of Applied Physics

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Na, Kee-Yeol, Ha, Jong-Bong, Choi, Moon-Ho, Kim, Nam-Soo, Kim, Yeong-Seuk (2006) Optimizing the Gate-to-Drift Overlap Length of Lateral Double Diffused Metal–Oxide–Semiconductor Field Effect Transistor Devices to Improve Hot-Carrier Device Lifetime. Japanese Journal of Applied Physics, 45 (3) 1525-1529 doi:10.1143/jjap.45.1525
Iwata, Hideyuki, Matsuda, Toshihiro, Ohzone, Takashi (2002) Quantum-Mechanical Simulation of Counter Doped Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Single Work Function Metal Gate. Japanese Journal of Applied Physics, 41. 6337-6341 doi:10.1143/jjap.41.6337
Chiang, Te-Kuang (2010) New Analytical Model for Short-Channel Fully Depleted Dual-Material-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, 49 (7) 74304 doi:10.1143/jjap.49.074304
Shimizu, Masahiro, Kuroi, Takashi, Inuishi, Masahide, Arima, Hideaki, Abe, Haruhiko, Hamaguchi, Chihiro (1998) Subquarter-micrometer Dual Gate Complementary Metal Oxide Semiconductor Field Effect Transistor with Ultrathin Gate Oxide of 2 nm. Japanese Journal of Applied Physics, 37. 5926-5931 doi:10.1143/jjap.37.5926
Nakajima, Kazuaki, Koyama, Masato, Aoyama, Tomonori, Nishiyama, Akira, Eguchi, Kazuhiro, Suguro, Kyoichi (2007) Work Function Modulation by Segregation of Indium through Tungsten Gate for Dual-Metal-Gate Complementary Metal Oxide Semiconductor Applications. Japanese Journal of Applied Physics, 46 (4) 1885-1887 doi:10.1143/jjap.46.1885
Na, Kee-Yeol, Baek, Ki-Ju, Kim, Yeong-Seuk (2008) Improvement of the Transconductance in a LDMOS Transistor with Dual Gate Oxide. Journal of the Korean Physical Society, 52 (4). 1128-1132 doi:10.3938/jkps.52.1128
Lee, Nam-Hyun, Kim, Hyung-wook, Kang, Bongkoo (2012) Impact of Dynamic Stress on Reliability of Nanoscale n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with SiON Gate Dielectric Operating in a Complementary Metal–Oxide–Semiconductor Inverter at Elevated Temperature. Japanese Journal of Applied Physics, 51 (2) 2 doi:10.1143/jjap.51.02bc13
Yang, Ji-Woon, Park, Chang Seo, Smith, Casey E., Adhikari, Hemant, Huang, Jeff, Heh, Dawei, Majhi, Prashant, Jammy, Raj (2011) Erratum: “Mitigation of Complementary Metal–Oxide–Semiconductor Variability with Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors”. Japanese Journal of Applied Physics, 50. 119201 doi:10.1143/jjap.50.119201
Yang, Ji-Woon, Park, Chang Seo, Smith, Casey E., Adhikari, Hemant, Huang, Jeff, Heh, Dawei, Majhi, Prashant, Jammy, Raj (2009) Mitigation of Complementary Metal–Oxide–Semiconductor Variability with Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, 48 (4) 4 doi:10.1143/jjap.48.04c056
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Huang, Chih-Feng, Tsui, Bing-Yue (2006) Investigation of NiSi Fully-Silicided Gate on SiO2and HfO2for Applications in Metal–Oxide–Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, 45 (7) 5702-5707 doi:10.1143/jjap.45.5702
 
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