Shin, Dong-Soo (2006) Reduction in Escape Times of Photogenerated Charge Carriers with Asymmetric Intrastep Quantum Wells and Subsequent Improvement in Saturation Optical Intensity. Japanese Journal of Applied Physics, 45 (12) 9063-9065 doi:10.1143/jjap.45.9063
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Reduction in Escape Times of Photogenerated Charge Carriers with Asymmetric Intrastep Quantum Wells and Subsequent Improvement in Saturation Optical Intensity | ||
| Journal | Japanese Journal of Applied Physics | ||
| Authors | Shin, Dong-Soo | Author | |
| Year | 2006 (December 7) | Volume | 45 |
| Issue | 12 | ||
| Publisher | Japan Society of Applied Physics | ||
| DOI | doi:10.1143/jjap.45.9063Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 15027312 | Long-form Identifier | mindat:1:5:15027312:9 |
| GUID | 0 | ||
| Full Reference | Shin, Dong-Soo (2006) Reduction in Escape Times of Photogenerated Charge Carriers with Asymmetric Intrastep Quantum Wells and Subsequent Improvement in Saturation Optical Intensity. Japanese Journal of Applied Physics, 45 (12) 9063-9065 doi:10.1143/jjap.45.9063 | ||
| Plain Text | Shin, Dong-Soo (2006) Reduction in Escape Times of Photogenerated Charge Carriers with Asymmetric Intrastep Quantum Wells and Subsequent Improvement in Saturation Optical Intensity. Japanese Journal of Applied Physics, 45 (12) 9063-9065 doi:10.1143/jjap.45.9063 | ||
| In | (2006, December) Japanese Journal of Applied Physics Vol. 45 (12) Japan Society of Applied Physics | ||
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