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Kageshima, Hiroyuki, Uematsu, Masahi, Akagi, Kazuto, Tsuneyuki, Shinji, Akiyama, Toru, Shiraishi, Kenji (2006) Transport Mechanism of Interfacial Network Forming Atoms during Silicon Oxidation. Japanese Journal of Applied Physics, 45 (2) 694-699 doi:10.1143/jjap.45.694

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Reference TypeJournal (article/letter/editorial)
TitleTransport Mechanism of Interfacial Network Forming Atoms during Silicon Oxidation
JournalJapanese Journal of Applied Physics
AuthorsKageshima, HiroyukiAuthor
Uematsu, MasahiAuthor
Akagi, KazutoAuthor
Tsuneyuki, ShinjiAuthor
Akiyama, ToruAuthor
Shiraishi, KenjiAuthor
Year2006 (February 8)Volume45
Issue2
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.45.694Search in ResearchGate
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Mindat Ref. ID15027480Long-form Identifiermindat:1:5:15027480:5
GUID0
Full ReferenceKageshima, Hiroyuki, Uematsu, Masahi, Akagi, Kazuto, Tsuneyuki, Shinji, Akiyama, Toru, Shiraishi, Kenji (2006) Transport Mechanism of Interfacial Network Forming Atoms during Silicon Oxidation. Japanese Journal of Applied Physics, 45 (2) 694-699 doi:10.1143/jjap.45.694
Plain TextKageshima, Hiroyuki, Uematsu, Masahi, Akagi, Kazuto, Tsuneyuki, Shinji, Akiyama, Toru, Shiraishi, Kenji (2006) Transport Mechanism of Interfacial Network Forming Atoms during Silicon Oxidation. Japanese Journal of Applied Physics, 45 (2) 694-699 doi:10.1143/jjap.45.694
In(2006, February) Japanese Journal of Applied Physics Vol. 45 (2) Japan Society of Applied Physics

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Kageshima, Hiroyuki, Uematsu, Masahi, Akagi, Kazuto, Tsuneyuki, Shinji, Akiyama, Toru, Shiraishi, Kenji (2004) Theoretical Study of Excess Si Emitted from Si-oxide/Si Interfaces. Japanese Journal of Applied Physics, 43 (12) 8223-8226 doi:10.1143/jjap.43.8223
Kageshima, Hiroyuki, Uematsu, Masahi, Akiyama, Toru, Ito, Tomonori (2006) Oxygen Trap Hypothesis in Silicon Oxide. Japanese Journal of Applied Physics, 45 (10) 7672-7674 doi:10.1143/jjap.45.7672
Uematsu, Masashi, Kageshima, Hiroyuki, Shiraishi, Kenji (2000) Unified Simulation of Silicon Oxidation Based on the Interfacial Silicon Emission Model. Japanese Journal of Applied Physics, 39. doi:10.1143/jjap.39.l699
Uematsu, Masashi, Kageshima, Hiroyuki, Shiraishi, Kenji (2000) Simulation of High-Pressure Oxidation of Silicon Based on the Interfacial Silicon Emission Model. Japanese Journal of Applied Physics, 39. doi:10.1143/jjap.39.l952
Uematsu, Masashi, Kageshima, Hiroyuki, Shiraishi, Kenji (2002) Interfacial Silicon Emission in Dry Oxidation-the Effect of H and Cl. Japanese Journal of Applied Physics, 41. 2455-2458 doi:10.1143/jjap.41.2455
Uematsu, Masashi, Kageshima, Hiroyuki, Shiraishi, Kenji (2000) Oxidation Simulation of (111) and (100) Silicon Substrates Based on the Interfacial Silicon Emission Model. Japanese Journal of Applied Physics, 39. doi:10.1143/jjap.39.l1135
Uematsu, Masashi, Kageshima, Hiroyuki, Shiraishi, Kenji (2001) Oxidation Simulation of Heavily Phosphorus-Doped Silicon based on the Interfacial Silicon Emission Model. Japanese Journal of Applied Physics, 40. 5197-5200 doi:10.1143/jjap.40.5197
Kageshima, H., Uematsu, M., Akagi, K., Tsuneyuki, S., Akiyama, T., Shiraishi, K. (2006) Mechanism of oxide deformation during silicon thermal oxidation. Physica B: Condensed Matter, 376. 407-410 doi:10.1016/j.physb.2005.12.105
Uematsu, Masashi, Kageshima, Hiroyuki, Shiraishi, Kenji (2001) The Effect of Chlorine on Silicon Oxidation: Simulation based on the Interfacial Silicon Emission Model. Japanese Journal of Applied Physics, 40. 2217-2218 doi:10.1143/jjap.40.2217
Akiyama, Toru, Hori, Shinsuke, Nakamura, Kohji, Ito, Tomonori, Kageshima, Hiroyuki, Uematsu, Masashi, Shiraishi, Kenji (2018) Reaction mechanisms at 4H-SiC/SiO2interface during wet SiC oxidation. Japanese Journal of Applied Physics, 57 (4) 4 doi:10.7567/jjap.57.04fr08
Akiyama, Toru, Kageshima, Hiroyuki, Uematsu, Masashi, Ito, Tomonori (2008) Stress Dependence of Oxidation Reaction at SiO2/Si Interfaces during Silicon Thermal Oxidation. Japanese Journal of Applied Physics, 47 (9) 7089-7093 doi:10.1143/jjap.47.7089
 
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