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Ryzhii, Victor, Ryzhii, Maxim, Khmyrova, Irina, Otsuji, Taiichi, Shur, Michael S. (2006) Resonant Terahertz Photomixing in Integrated High-Electron-Mobility Transistor and Quantum-Well Infrared Photodetector Device. Japanese Journal of Applied Physics, 45 (4) 3648-3651 doi:10.1143/jjap.45.3648

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Reference TypeJournal (article/letter/editorial)
TitleResonant Terahertz Photomixing in Integrated High-Electron-Mobility Transistor and Quantum-Well Infrared Photodetector Device
JournalJapanese Journal of Applied Physics
AuthorsRyzhii, VictorAuthor
Ryzhii, MaximAuthor
Khmyrova, IrinaAuthor
Otsuji, TaiichiAuthor
Shur, Michael S.Author
Year2006 (April 25)Volume45
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.45.3648Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15028008Long-form Identifiermindat:1:5:15028008:0
GUID0
Full ReferenceRyzhii, Victor, Ryzhii, Maxim, Khmyrova, Irina, Otsuji, Taiichi, Shur, Michael S. (2006) Resonant Terahertz Photomixing in Integrated High-Electron-Mobility Transistor and Quantum-Well Infrared Photodetector Device. Japanese Journal of Applied Physics, 45 (4) 3648-3651 doi:10.1143/jjap.45.3648
Plain TextRyzhii, Victor, Ryzhii, Maxim, Khmyrova, Irina, Otsuji, Taiichi, Shur, Michael S. (2006) Resonant Terahertz Photomixing in Integrated High-Electron-Mobility Transistor and Quantum-Well Infrared Photodetector Device. Japanese Journal of Applied Physics, 45 (4) 3648-3651 doi:10.1143/jjap.45.3648
In(2006, April) Japanese Journal of Applied Physics Vol. 45 (4) Japan Society of Applied Physics


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