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Hisaka, Takayuki, Nogami, Yoichi, Sasaki, Hajime, Yoshida, Naohito, Hayashi, Kazuo, Villanueva, Anita A., del Alamo, Jesus A. (2008) Degradation Mechanism of AlGaAs/InGaAs Power Pseudomorphic High-Electron-Mobility Transistors under Large-Signal Operation. Japanese Journal of Applied Physics, 47 (2) 833-838 doi:10.1143/jjap.47.833

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Reference TypeJournal (article/letter/editorial)
TitleDegradation Mechanism of AlGaAs/InGaAs Power Pseudomorphic High-Electron-Mobility Transistors under Large-Signal Operation
JournalJapanese Journal of Applied Physics
AuthorsHisaka, TakayukiAuthor
Nogami, YoichiAuthor
Sasaki, HajimeAuthor
Yoshida, NaohitoAuthor
Hayashi, KazuoAuthor
Villanueva, Anita A.Author
del Alamo, Jesus A.Author
Year2008 (February 15)Volume47
Issue2
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.47.833Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15031474Long-form Identifiermindat:1:5:15031474:7
GUID0
Full ReferenceHisaka, Takayuki, Nogami, Yoichi, Sasaki, Hajime, Yoshida, Naohito, Hayashi, Kazuo, Villanueva, Anita A., del Alamo, Jesus A. (2008) Degradation Mechanism of AlGaAs/InGaAs Power Pseudomorphic High-Electron-Mobility Transistors under Large-Signal Operation. Japanese Journal of Applied Physics, 47 (2) 833-838 doi:10.1143/jjap.47.833
Plain TextHisaka, Takayuki, Nogami, Yoichi, Sasaki, Hajime, Yoshida, Naohito, Hayashi, Kazuo, Villanueva, Anita A., del Alamo, Jesus A. (2008) Degradation Mechanism of AlGaAs/InGaAs Power Pseudomorphic High-Electron-Mobility Transistors under Large-Signal Operation. Japanese Journal of Applied Physics, 47 (2) 833-838 doi:10.1143/jjap.47.833
In(2008, February) Japanese Journal of Applied Physics Vol. 47 (2) Japan Society of Applied Physics

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Fujishiro, Hiroki Inomata, Tsuji, Hiromi, Nishi, Seiji (1992) Characterization of Ultrahigh-Speed Pseudomorphic InGaAs/AlGaAs Inverted High Electron Mobility Transistors. Japanese Journal of Applied Physics, 31. 1272-1279 doi:10.1143/jjap.31.1272
Huang, Chung-Er, Lee, Chien-Ping, Huang, Ron-Ting, Chang, Mau-Chung Frank (2001) Comparison of InGaP/InGaAs/GaAs and InGaP/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistors. Japanese Journal of Applied Physics, 40. 6761-6763 doi:10.1143/jjap.40.6761
Chen, Szu-Hung, Chang, Li, Chang, Edward Yi, Chang, Chun-Yen (2002) Low-Voltage-Operation High-Power-Density AlGaAs/InGaAs Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor for Personal Handy-Phone Handset Application. Japanese Journal of Applied Physics, 41. doi:10.1143/jjap.41.l20
Yoshida, Naohito, Yamamoto, Yoshitsugu, Takano, Hirozou, Sonoda, Takuji, Takamiya, Saburou, Mitsui, Shigeru (1994) Alloyed and Non-Alloyed Ohmic Contacts for AlInAs/InGaAs High Electron Mobility Transistors. Japanese Journal of Applied Physics, 33. 3373-3376 doi:10.1143/jjap.33.3373
Tanimoto, Takuma, Kudo, Makoto, Mori, Mitsuhiro, Kodera, Hiroshi (1994) Dry Etching Damage and Activation Ratio Degradation in δ -Doped AlGaAs/InGaAs High Electron Mobility Transistors. Japanese Journal of Applied Physics, 33. doi:10.1143/jjap.33.l260
Ohshima, Tomoyuki, Yoshida, Masaaki, Shigemasa, Ryoji, Tsunotani, Masanori, Kimura, Tamotsu (2000) Gate Orientation Dependence of InGaAs/AlGaAs High Electron Mobility Transistors Formed by Wet Recess Etching. Japanese Journal of Applied Physics, 39. 5052-5056 doi:10.1143/jjap.39.5052
Wu, Y., Chen, C.-Y., del Alamo, J. A. (2015) Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature Direct Current stress. Journal of Applied Physics, 117 (2). 25707pp. doi:10.1063/1.4905677
Nishiyama, Shinya, Higuchi, Katsuhiko (2003) Dominant Noise Source of Low-Frequency Fluctuation in AlGaAs/InGaAs High Electron Mobility Transistors. Japanese Journal of Applied Physics, 42. 2296-2299 doi:10.1143/jjap.42.2296
Lee, Jong-Wook, Kuliev, Almaz S., Adesida, Ilesanmi (2008) Short-Channel AlGaN/GaN Field-Plated High-Electron-Mobility Transistors for X-Band High Power Operation. Japanese Journal of Applied Physics, 47 (3) 1479-1483 doi:10.1143/jjap.47.1479
Yeon, Seongjin, Seo, Kwangseok (2008) High Performance 50 nm InAlAs/In0.75GaAs Metamorphic High Electron Mobility Transistors with Si3N4Passivation on Thin InGaAs Layer. Japanese Journal of Applied Physics, 47 (4) 2868-2871 doi:10.1143/jjap.47.2868
Lee, Jong-Lam, Kim, Yi-Tae, Oh, Jung-Woo, Lee, Byung-Teak (2001) AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor using Pd/Ge Ohmic Contact. Japanese Journal of Applied Physics, 40. 1188-1193 doi:10.1143/jjap.40.1188
 
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