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Nihei, Ryota, Usami, Noritaka, Nakajima, Kazuo (2009) Growth of Compositionally Graded SiGe Bulk Crystal and Its Application As Substrate with Lateral Variation in Ge Content. Japanese Journal of Applied Physics, 48 (11) 115507 doi:10.1143/jjap.48.115507

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Reference TypeJournal (article/letter/editorial)
TitleGrowth of Compositionally Graded SiGe Bulk Crystal and Its Application As Substrate with Lateral Variation in Ge Content
JournalJapanese Journal of Applied Physics
AuthorsNihei, RyotaAuthor
Usami, NoritakaAuthor
Nakajima, KazuoAuthor
Year2009 (November 20)Volume48
Issue11
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.48.115507Search in ResearchGate
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Mindat Ref. ID15033102Long-form Identifiermindat:1:5:15033102:7
GUID0
Full ReferenceNihei, Ryota, Usami, Noritaka, Nakajima, Kazuo (2009) Growth of Compositionally Graded SiGe Bulk Crystal and Its Application As Substrate with Lateral Variation in Ge Content. Japanese Journal of Applied Physics, 48 (11) 115507 doi:10.1143/jjap.48.115507
Plain TextNihei, Ryota, Usami, Noritaka, Nakajima, Kazuo (2009) Growth of Compositionally Graded SiGe Bulk Crystal and Its Application As Substrate with Lateral Variation in Ge Content. Japanese Journal of Applied Physics, 48 (11) 115507 doi:10.1143/jjap.48.115507
In(2009, November) Japanese Journal of Applied Physics Vol. 48 (11) Japan Society of Applied Physics

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Usami, Noritaka, Nihei, Ryota, Yonenaga, Ichiro, Nose, Yoshitaro, Nakajima, Kazuo (2007) Application of Czochralski-grown SiGe bulk crystal as a substrate for luminescent strained quantum wells. Applied Physics Letters, 90 (18). 181914pp. doi:10.1063/1.2735286
Kutsukake, Kentaro, Usami, Noritaka, Fujiwara, Kozo, Ujihara, Toru, Sazaki, Gen, Zhang, Baoping, Segawa, Yusaburo, Nakajima, Kazuo (2003) Fabrication of SiGe-on-Insulator through Thermal Diffusion of Ge on Si-on-Insulator Substrate. Japanese Journal of Applied Physics, 42. doi:10.1143/jjap.42.l232
Sanorpim, Sakuntam, Katayama, Ryuji, Onabe, Kentaro, Usami, Noritaka, Nakajima, Kazuo (2010) Lattice-Latching Effect in Metalorganic Vapor Phase Epitaxy Growth of InGaAsN Film Lattice-Matched to Bulk InGaAs Substrate. Japanese Journal of Applied Physics, 49 (4) 40202 doi:10.1143/jjap.49.040202
Azuma, Yukinaga, Nishijima, Yoshito, Nakajima, Kazuo, Usami, Noritaka, Fujiwara, Kozo, Ujihara, Toru (2004) Successful Growth of InxGa1-xAs (x>0.18) Single Bulk Crystal Directly on GaAs Seed Crystal with Preferential Orientation. Japanese Journal of Applied Physics, 43. doi:10.1143/jjap.43.l907
Ohdaira, Keisuke, Usami, Noritaka, Pan, Wugen, Fujiwara, Kozo, Nakajima, Kazuo (2005) Analysis of the Dark-Current Density in Solar Cells Based on Multicrystalline SiGe. Japanese Journal of Applied Physics, 44 (11) 8019-8022 doi:10.1143/jjap.44.8019
Usami, Noritaka, Kutsukake, Kentaro, Pan, Wugen, Fujiwara, Kozo, Ujihara, Toru, Zhang, Baoping, Yokoyama, Takashi, Nakajima, Kazuo (2005) Growth of SiGe-on-insulator and its application as a substrate for epitaxy of strained-Si layer. Journal of Crystal Growth, 275 (1). doi:10.1016/j.jcrysgro.2004.11.141
Usami, Noritaka, Azuma, Yukinaga, Ujihara, Toru, Sazaki, Gen, Miyashita, Satoru, Murakami, Yoshihiro, Nakajima, Kazuo (2001) Growth of SixGe1-x($x \fallingdotseq 0.15$) Bulk Crystal with Uniform Composition Utilizingin situMonitoring of the Crystal-solution Interface. Japanese Journal of Applied Physics, 40. 4141-4144 doi:10.1143/jjap.40.4141
Usami, Noritaka, Kitamura, Masayuki, Obara, Kazuo, Nose, Yoshitaro, Shishido, Toetsu, Nakajima, Kazuo (2005) Floating zone growth of Si-rich SiGe bulk crystal using pre-synthesized SiGe feed rod with uniform composition. Journal of Crystal Growth, 284 (1). 57-64 doi:10.1016/j.jcrysgro.2005.06.060
Usami, Noritaka, Fujiwara, Kozo, Pan, Wugen, Nakajima, Kazuo (2005) On the Origin of Improved Conversion Efficiency of Solar Cells Based on SiGe with Compositional Distribution. Japanese Journal of Applied Physics, 44 (2) 857-860 doi:10.1143/jjap.44.857
Usami, Noritaka, Takahashi, Tatsuya, Fujiwara, Kozo, Ujihara, Toru, Sazaki, Gen, Murakami, Yoshihiro, Nakajima, Kazuo (2002) Evidence of the Presence of Built-in Strain in Multicrystalline SiGe with Large Compositional Distribution. Japanese Journal of Applied Physics, 41. 4462-4465 doi:10.1143/jjap.41.4462
Usami, Noritaka, Fujiwara, Kozo, Ujihara, Toru, Sazaki, Gen, Yaguchi, Hiroyuki, Murakami, Yoshihiro, Nakajima, Kazuo (2002) Control of Macroscopic Absorption Coefficient of Multicrystalline SiGe by Microscopic Compositional Distribution. Japanese Journal of Applied Physics, 41. doi:10.1143/jjap.41.l37
 
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