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Hsu, Hsiao-Chiu, Su, Yan-Kuin, Huang, Shyh-Jer, Wang, Yu-Jen, Wu, Chun-Ying, Chou, Ming-Chieh (2010) Direct Growth ofa-Plane GaN onr-Plane Sapphire by Metal Organic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 49 (4) 4 doi:10.1143/jjap.49.04dh05

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Reference TypeJournal (article/letter/editorial)
TitleDirect Growth ofa-Plane GaN onr-Plane Sapphire by Metal Organic Chemical Vapor Deposition
JournalJapanese Journal of Applied Physics
AuthorsHsu, Hsiao-ChiuAuthor
Su, Yan-KuinAuthor
Huang, Shyh-JerAuthor
Wang, Yu-JenAuthor
Wu, Chun-YingAuthor
Chou, Ming-ChiehAuthor
Year2010 (April 20)Volume49
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.49.04dh05Search in ResearchGate
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Mindat Ref. ID15035331Long-form Identifiermindat:1:5:15035331:9
GUID0
Full ReferenceHsu, Hsiao-Chiu, Su, Yan-Kuin, Huang, Shyh-Jer, Wang, Yu-Jen, Wu, Chun-Ying, Chou, Ming-Chieh (2010) Direct Growth ofa-Plane GaN onr-Plane Sapphire by Metal Organic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 49 (4) 4 doi:10.1143/jjap.49.04dh05
Plain TextHsu, Hsiao-Chiu, Su, Yan-Kuin, Huang, Shyh-Jer, Wang, Yu-Jen, Wu, Chun-Ying, Chou, Ming-Chieh (2010) Direct Growth ofa-Plane GaN onr-Plane Sapphire by Metal Organic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 49 (4) 4 doi:10.1143/jjap.49.04dh05
In(2010, April) Japanese Journal of Applied Physics Vol. 49 (4) Japan Society of Applied Physics

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Araki, Masahiro, Mochimizo, Noriaki, Hoshino, Katsuyuki, Tadatomo, Kazuyuki (2007) Direct Growth ofa-Plane GaN onr-Plane Sapphire Substrate by Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 46 (2) 555-559 doi:10.1143/jjap.46.555
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Cheng, An-Ting, Su, Yan-Kuin, Lai, Wei-Chih, Chen, Ying-Zhi (2008) Metalorganic Vapor Phase Epitaxy Growth ofm-Plane GaN Using LiAlO2Substrates. Japanese Journal of Applied Physics, 47 (4) 3074-3076 doi:10.1143/jjap.47.3074
Araki, Masahiro, Hoshino, Katsuyuki, Tadatomo, Kazuyuki (2007) Direct growth ofa-plane GaN onr-plane sapphire substrate by metalorganic vapor phase epitaxy. physica status solidi (c), 4 (7). 2540-2543 doi:10.1002/pssc.200674829
Yang, Weijia, Zhang, Zichen, Wang, Wenliang, Zheng, Yulin, Wang, Haiyan, Li, Guoqiang (2018) High-quality nonpolara-plane GaN epitaxial films grown onr-plane sapphire substrates by the combination of pulsed laser deposition and metal–organic chemical vapor deposition. Japanese Journal of Applied Physics, 57 (5) 51001 doi:10.7567/jjap.57.051001
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