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Takeyama, Mayumi B., Sato, Masaru, Aoyagi, Eiji, Noya, Atsushi (2010) Reactively Sputtered Nanocrystalline ZrN Film as Extremely Thin Diffusion Barrier between Cu and SiO2. Japanese Journal of Applied Physics, 49 (5) 5 doi:10.1143/jjap.49.05fa06

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Reference TypeJournal (article/letter/editorial)
TitleReactively Sputtered Nanocrystalline ZrN Film as Extremely Thin Diffusion Barrier between Cu and SiO2
JournalJapanese Journal of Applied Physics
AuthorsTakeyama, Mayumi B.Author
Sato, MasaruAuthor
Aoyagi, EijiAuthor
Noya, AtsushiAuthor
Year2010 (May 20)Volume49
Issue5
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.49.05fa06Search in ResearchGate
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Mindat Ref. ID15035544Long-form Identifiermindat:1:5:15035544:3
GUID0
Full ReferenceTakeyama, Mayumi B., Sato, Masaru, Aoyagi, Eiji, Noya, Atsushi (2010) Reactively Sputtered Nanocrystalline ZrN Film as Extremely Thin Diffusion Barrier between Cu and SiO2. Japanese Journal of Applied Physics, 49 (5) 5 doi:10.1143/jjap.49.05fa06
Plain TextTakeyama, Mayumi B., Sato, Masaru, Aoyagi, Eiji, Noya, Atsushi (2010) Reactively Sputtered Nanocrystalline ZrN Film as Extremely Thin Diffusion Barrier between Cu and SiO2. Japanese Journal of Applied Physics, 49 (5) 5 doi:10.1143/jjap.49.05fa06
In(2010, May) Japanese Journal of Applied Physics Vol. 49 (5) Japan Society of Applied Physics

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Sato, Masaru, Takeyama, Mayumi B., Aoyagi, Eiji, Noya, Atsushi (2008) Application of Extremely Thin ZrN Film as Diffusion Barrier between Cu and SiOC. Japanese Journal of Applied Physics, 47 (1) 620-624 doi:10.1143/jjap.47.620
Sato, Masaru, Takeyama, Mayumi B., Hayasaka, Yuichirou, Aoyagi, Eiji, Noya, Atsushi (2011) Barrier Properties of Thin ZrNxFilms Prepared by Radical-Assisted Surface Reaction. Japanese Journal of Applied Physics, 50 (5) 5 doi:10.1143/jjap.50.05ea07
Maniruzzaman, Md., Takeyama, Mayumi B., Sato, Masaru, Hayasaka, Yuichiro, Aoyagi, Eiji, Noya, Atsushi (2006) Preferentially Oriented Cu[111] Layer Formed on Thin Nb Barrier on SiO2. Japanese Journal of Applied Physics, 45 (12) 9172-9179 doi:10.1143/jjap.45.9172
Sato, Masaru, Takeyama, Mayumi B., Hayasaka, Yuichirou, Aoyagi, Eiji, Noya, Atsushi (2011) Barrier Properties of Thin ZrNxFilms Prepared by Radical-Assisted Surface Reaction. Japanese Journal of Applied Physics, 50 (5) 5 doi:10.7567/jjap.50.05ea07
Takeyama, Mayumi B., Itoi, Takaomi, Noya, Atsushi (2010) Evolution of Microstructures in Nanocrystalline VN Barrier Leading to Failure in Cu/VN/SiO2/Si Systems. Japanese Journal of Applied Physics, 49 (5) 5 doi:10.1143/jjap.49.05fa05
Takeyama, Mayumi B., Sato, Masaru, Sudoh, Hiroshi, Machida, Hideaki, Ito, Shun, Aoyagi, Eiji, Noya, Atsushi (2011) Atomic Layer Deposition of Thin VNxFilm from Tetrakis(diethylamido)vanadium Precursor. Japanese Journal of Applied Physics, 50 (5) 5 doi:10.1143/jjap.50.05ea06
Takeyama, Mayumi B., Sato, Masaru, Noya, Atsushi (2015) Thermally stable ZrN/Zr3N4bilayered barrier system for through-Si-via process. Japanese Journal of Applied Physics, 54 (5) 5 doi:10.7567/jjap.54.05ee02
Noya, Atsushi, Takeyama, Mayumi, Sasaki, Katsutaka, Aoyagi, Eiji, Hiraga, Kenji (1994) Thermal Stability ofW2NFilm as a Diffusion Barrier between Al and Si. Japanese Journal of Applied Physics, 33. 1528-1529 doi:10.1143/jjap.33.1528
Maniruzzaman, Md., Takeyama, Mayumi B., Hayasaka, Yuichiro, Aoyagi, Eiji, Noya, Atsushi (2004) Formation of Preferentially Oriented Cu [111] Layer on Nb [110] Barrier on SiO2. Japanese Journal of Applied Physics, 43. doi:10.1143/jjap.43.l1565
Takeyama, Mayumi B., Sato, Masaru, Sudoh, Hiroshi, Machida, Hideaki, Ito, Shun, Aoyagi, Eiji, Noya, Atsushi (2011) Atomic Layer Deposition of Thin VNxFilm from Tetrakis(diethylamido)vanadium Precursor. Japanese Journal of Applied Physics, 50 (5) 5 doi:10.7567/jjap.50.05ea06
Takeyama, Mayumi B., Sato, Masaru, Itoi, Takaomi, Aoyagi, Eiji, Noya, Atsushi (2016) Barrier properties of ultrathin VN films of low resistivity and high density for Cu interconnects. Japanese Journal of Applied Physics, 55 (2) 2 doi:10.7567/jjap.55.02bc10
 
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