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Kim, Woong-Sun, Moon, Yeon-Keon, Lee, Sih, Kang, Byung-Woo, Kim, Kyung-Taek, Lee, Je-Hun, Kim, Joo-Han, Ahn, Byung-Du, Park, Jong-Wan (2010) Amorphous Indium Gallium Zinc Oxide Semiconductor Thin Film Transistors Using O2Plasma Treatment on the SiNxGate Insulator. Japanese Journal of Applied Physics, 49 (8) 8 doi:10.1143/jjap.49.08jf02

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Reference TypeJournal (article/letter/editorial)
TitleAmorphous Indium Gallium Zinc Oxide Semiconductor Thin Film Transistors Using O2Plasma Treatment on the SiNxGate Insulator
JournalJapanese Journal of Applied Physics
AuthorsKim, Woong-SunAuthor
Moon, Yeon-KeonAuthor
Lee, SihAuthor
Kang, Byung-WooAuthor
Kim, Kyung-TaekAuthor
Lee, Je-HunAuthor
Kim, Joo-HanAuthor
Ahn, Byung-DuAuthor
Park, Jong-WanAuthor
Year2010 (August 20)Volume49
Issue8
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.49.08jf02Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15036087Long-form Identifiermindat:1:5:15036087:4
GUID0
Full ReferenceKim, Woong-Sun, Moon, Yeon-Keon, Lee, Sih, Kang, Byung-Woo, Kim, Kyung-Taek, Lee, Je-Hun, Kim, Joo-Han, Ahn, Byung-Du, Park, Jong-Wan (2010) Amorphous Indium Gallium Zinc Oxide Semiconductor Thin Film Transistors Using O2Plasma Treatment on the SiNxGate Insulator. Japanese Journal of Applied Physics, 49 (8) 8 doi:10.1143/jjap.49.08jf02
Plain TextKim, Woong-Sun, Moon, Yeon-Keon, Lee, Sih, Kang, Byung-Woo, Kim, Kyung-Taek, Lee, Je-Hun, Kim, Joo-Han, Ahn, Byung-Du, Park, Jong-Wan (2010) Amorphous Indium Gallium Zinc Oxide Semiconductor Thin Film Transistors Using O2Plasma Treatment on the SiNxGate Insulator. Japanese Journal of Applied Physics, 49 (8) 8 doi:10.1143/jjap.49.08jf02
In(2010, August) Japanese Journal of Applied Physics Vol. 49 (8) Japan Society of Applied Physics

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Moon, Yeon-Keon, Lee, Sih, Kim, Woong-Sun, Kang, Byung-Woo, Jeong, Chang-Oh, Lee, Dong-Hoon, Park, Jong-Wan (2009) Improvement in the bias stability of amorphous indium gallium zinc oxide thin-film transistors using an O2 plasma-treated insulator. Applied Physics Letters, 95 (1). 13507pp. doi:10.1063/1.3167816
Kang, Byung-Woo, Kim, Woong-Sun, Hwang, Chang-Mook, Moon, Dae-Yong, Kim, Jay-Jung, Park, Jae-Gun, Park, Jong-Wan (2010) Titanium Oxide Thin Films Prepared by Plasma Enhanced Atomic Layer Deposition Using Remote Electron Cyclotron Resonance Plasma for Organic Devices Passivation. Japanese Journal of Applied Physics, 49 (8) 8 doi:10.1143/jjap.49.08jg05
Kim, Chang-Jung, Kim, Sangwook, Lee, Je-Hun, Park, Jin-Seong, Kim, Sunil, Park, Jaechul, Lee, Eunha, Lee, Jaechul, Park, Youngsoo, Kim, Joo Han, Shin, Sung Tae, Chung, U-In (2009) Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors. Applied Physics Letters, 95 (25). 252103pp. doi:10.1063/1.3275801
Lee, Soo-Yeon, Kim, Sun-Jae, Lee, Young Wook, Lee, Woo-Geun, Yoon, Kap-Soo, Han, Min-Koo (2012) Effect of Channel Length on the Reliability of Amorphous Indium–Gallium–Zinc Oxide Thin Film Transistors. Japanese Journal of Applied Physics, 51. 3 doi:10.1143/jjap.51.03cb03
Shin, Hyun Soo, Kim, Gun Hee, Jeong, Woong Hee, Ahn, Byung Du, Kim, Hyun Jae (2010) Electrical Properties of Yttrium–Indium–Zinc-Oxide Thin Film Transistors Fabricated Using the Sol–Gel Process and Various Yttrium Compositions. Japanese Journal of Applied Physics, 49 (3) 3 doi:10.1143/jjap.49.03cb01
Lee, Soo-Yeon, Kim, Sun-Jae, Lee, Young Wook, Lee, Woo-Geun, Yoon, Kap-Soo, Han, Min-Koo (2012) Effect of Channel Length on the Reliability of Amorphous Indium–Gallium–Zinc Oxide Thin Film Transistors. Japanese Journal of Applied Physics, 51 (3) 3 doi:10.7567/jjap.51.03cb03
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