Shimura, Takayoshi, Inoue, Tomoyuki, Shimokawa, Daisuke, Hosoi, Takuji, Imai, Yasuhiko, Sakata, Osami, Kimura, Shigeru, Watanabe, Heiji (2011) Characterization of SiGe Layer during Ge Condensation Process by X-ray Diffraction Methods. Japanese Journal of Applied Physics, 50. 10112 doi:10.1143/jjap.50.010112
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Characterization of SiGe Layer during Ge Condensation Process by X-ray Diffraction Methods | ||
| Journal | Japanese Journal of Applied Physics | ||
| Authors | Shimura, Takayoshi | Author | |
| Inoue, Tomoyuki | Author | ||
| Shimokawa, Daisuke | Author | ||
| Hosoi, Takuji | Author | ||
| Imai, Yasuhiko | Author | ||
| Sakata, Osami | Author | ||
| Kimura, Shigeru | Author | ||
| Watanabe, Heiji | Author | ||
| Year | 2011 (January 20) | Volume | 50 |
| Publisher | Japan Society of Applied Physics | ||
| DOI | doi:10.1143/jjap.50.010112Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 15036308 | Long-form Identifier | mindat:1:5:15036308:0 |
| GUID | 0 | ||
| Full Reference | Shimura, Takayoshi, Inoue, Tomoyuki, Shimokawa, Daisuke, Hosoi, Takuji, Imai, Yasuhiko, Sakata, Osami, Kimura, Shigeru, Watanabe, Heiji (2011) Characterization of SiGe Layer during Ge Condensation Process by X-ray Diffraction Methods. Japanese Journal of Applied Physics, 50. 10112 doi:10.1143/jjap.50.010112 | ||
| Plain Text | Shimura, Takayoshi, Inoue, Tomoyuki, Shimokawa, Daisuke, Hosoi, Takuji, Imai, Yasuhiko, Sakata, Osami, Kimura, Shigeru, Watanabe, Heiji (2011) Characterization of SiGe Layer during Ge Condensation Process by X-ray Diffraction Methods. Japanese Journal of Applied Physics, 50. 10112 doi:10.1143/jjap.50.010112 | ||
| In | (2011) Japanese Journal of Applied Physics Vol. 50. Japan Society of Applied Physics | ||
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