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Nakamine, Yoshifumi, Kodera, Tetsuo, Uchida, Ken, Oda, Shunri (2011) Removal of Surface Oxide Layer from Silicon Nanocrystals by Hydrogen Fluoride Vapor Etching. Japanese Journal of Applied Physics, 50. 115002 doi:10.1143/jjap.50.115002

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Reference TypeJournal (article/letter/editorial)
TitleRemoval of Surface Oxide Layer from Silicon Nanocrystals by Hydrogen Fluoride Vapor Etching
JournalJapanese Journal of Applied Physics
AuthorsNakamine, YoshifumiAuthor
Kodera, TetsuoAuthor
Uchida, KenAuthor
Oda, ShunriAuthor
Year2011 (October 27)Volume50
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.50.115002Search in ResearchGate
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Mindat Ref. ID15036623Long-form Identifiermindat:1:5:15036623:4
GUID0
Full ReferenceNakamine, Yoshifumi, Kodera, Tetsuo, Uchida, Ken, Oda, Shunri (2011) Removal of Surface Oxide Layer from Silicon Nanocrystals by Hydrogen Fluoride Vapor Etching. Japanese Journal of Applied Physics, 50. 115002 doi:10.1143/jjap.50.115002
Plain TextNakamine, Yoshifumi, Kodera, Tetsuo, Uchida, Ken, Oda, Shunri (2011) Removal of Surface Oxide Layer from Silicon Nanocrystals by Hydrogen Fluoride Vapor Etching. Japanese Journal of Applied Physics, 50. 115002 doi:10.1143/jjap.50.115002
In(2011) Japanese Journal of Applied Physics Vol. 50. Japan Society of Applied Physics

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