Watch the Dallas Symposium LIVE, and fundraiser auction
Ticket proceeds support mindat.org! - click here...
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Hamaya, Kohei, Ando, Yuichiro, Sadoh, Taizoh, Miyao, Masanobu (2011) Source–Drain Engineering Using Atomically Controlled Heterojunctions for Next-Generation SiGe Transistor Applications. Japanese Journal of Applied Physics, 50 (1) 10101 doi:10.7567/jjap.50.010101

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleSource–Drain Engineering Using Atomically Controlled Heterojunctions for Next-Generation SiGe Transistor Applications
JournalJapanese Journal of Applied Physics
AuthorsHamaya, KoheiAuthor
Ando, YuichiroAuthor
Sadoh, TaizohAuthor
Miyao, MasanobuAuthor
Year2011 (January 1)Volume50
Issue1
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.50.010101Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15036718Long-form Identifiermindat:1:5:15036718:7
GUID0
Full ReferenceHamaya, Kohei, Ando, Yuichiro, Sadoh, Taizoh, Miyao, Masanobu (2011) Source–Drain Engineering Using Atomically Controlled Heterojunctions for Next-Generation SiGe Transistor Applications. Japanese Journal of Applied Physics, 50 (1) 10101 doi:10.7567/jjap.50.010101
Plain TextHamaya, Kohei, Ando, Yuichiro, Sadoh, Taizoh, Miyao, Masanobu (2011) Source–Drain Engineering Using Atomically Controlled Heterojunctions for Next-Generation SiGe Transistor Applications. Japanese Journal of Applied Physics, 50 (1) 10101 doi:10.7567/jjap.50.010101
In(2011, January) Japanese Journal of Applied Physics Vol. 50 (1) Japan Society of Applied Physics

See Also

These are possibly similar items as determined by title/reference text matching only.

Hamaya, Kohei, Ando, Yuichiro, Sadoh, Taizoh, Miyao, Masanobu (2011) Source–Drain Engineering Using Atomically Controlled Heterojunctions for Next-Generation SiGe Transistor Applications. Japanese Journal of Applied Physics, 50. 10101 doi:10.1143/jjap.50.010101
Miyao, Masanobu, Sadoh, Taizoh (2017) Novel growth techniques of group-IV based semiconductors on insulator for next-generation electronics. Japanese Journal of Applied Physics, 56 (5) 5 doi:10.7567/jjap.56.05da06
Sadoh, Taizoh, Kamizuru, Hayato, Kenjo, Atsushi, Miyao, Masanobu (2007) Ge-Channel Thin-Film Transistor with Schottky Source/Drain Fabricated by Low-Temperature Processing. Japanese Journal of Applied Physics, 46 (3) 1250-1253 doi:10.1143/jjap.46.1250
Sadoh, Taizoh, Park, Jong-Hyeok, Aoki, Rikuta, Miyao, Masanobu (2016) Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics. Japanese Journal of Applied Physics, 55 (3) 3 doi:10.7567/jjap.55.03cb01
Sadoh, Taizoh, Park, Jong-Hyeok, Aoki, Rikuta, Miyao, Masanobu (2017) Erratum: “Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics”. Japanese Journal of Applied Physics, 56 (12) 129206 doi:10.7567/jjap.56.129206
Toko, Kaoru, Sadoh, Taizoh, Miyao, Masanobu (2009) Position-Controlled Growth of SiGe Crystal Grains on Insulator by Indentation-Induced Solid-Phase Crystallization. Japanese Journal of Applied Physics, 48 (3) 3 doi:10.1143/jjap.48.03b007
Sadoh, Taizoh, Ohyama, Yasuhiro, Kenjo, Atsushi, Ikeda, Keiji, Yamashita, Yoshimi, Miyao, Masanobu (2006) Suppression of Floating Body Effects in Polycrystalline Silicon Thin-Film Transistor by Schottky Source/Drain Structure. Japanese Journal of Applied Physics, 45 (5) 4370-4373 doi:10.1143/jjap.45.4370
Park, Jong-Hyeok, Kasahara, Kenji, Hamaya, Kohei, Miyao, Masanobu, Sadoh, Taizoh (2014) High carrier mobility in orientation-controlled large-grain (≥50 μm) Ge directly formed on flexible plastic by nucleation-controlled gold-induced-crystallization. Applied Physics Letters, 104 (25). 252110pp. doi:10.1063/1.4885716
Kanno, Hiroshi, Kenjo, Atsushi, Sadoh, Taizoh, Miyao, Masanobu (2006) Electric-Field-Assisted Metal-Induced Lateral Crystallization of Amorphous SiGe on SiO2. Japanese Journal of Applied Physics, 45 (5) 4351-4354 doi:10.1143/jjap.45.4351
Sadoh, Taizoh, Kenjo, Atsushi, Miyauchi, Akihiro, Inoue, Hironori, Miyao, Masanobu (2002) Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON. Japanese Journal of Applied Physics, 41. 2468-2471 doi:10.1143/jjap.41.2468
Kanno, Hiroshi, Tsunoda, Isao, Kenjo, Atsushi, Sadoh, Taizoh, Yamaguchi, Shinya, Miyao, Masanobu (2003) Metal-Induced Solid-Phase Crystallization of Amorphous SiGe Films on Insulator. Japanese Journal of Applied Physics, 42. 1933-1936 doi:10.1143/jjap.42.1933
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 22, 2025 08:17:24
Go to top of page