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Tomita, Motohiro, Kosemura, Daisuke, Takei, Munehisa, Nagata, Kohki, Akamatsu, Hiroaki, Ogura, Atsushi (2011) Evaluation of Strained-Silicon by Electron Backscattering Pattern Measurement: Comparison Study with UV-Raman Measurement and Edge Force Model Calculation. Japanese Journal of Applied Physics, 50 (1) 10111 doi:10.7567/jjap.50.010111

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Reference TypeJournal (article/letter/editorial)
TitleEvaluation of Strained-Silicon by Electron Backscattering Pattern Measurement: Comparison Study with UV-Raman Measurement and Edge Force Model Calculation
JournalJapanese Journal of Applied Physics
AuthorsTomita, MotohiroAuthor
Kosemura, DaisukeAuthor
Takei, MunehisaAuthor
Nagata, KohkiAuthor
Akamatsu, HiroakiAuthor
Ogura, AtsushiAuthor
Year2011 (January 1)Volume50
Issue1
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.50.010111Search in ResearchGate
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Mindat Ref. ID15036729Long-form Identifiermindat:1:5:15036729:3
GUID0
Full ReferenceTomita, Motohiro, Kosemura, Daisuke, Takei, Munehisa, Nagata, Kohki, Akamatsu, Hiroaki, Ogura, Atsushi (2011) Evaluation of Strained-Silicon by Electron Backscattering Pattern Measurement: Comparison Study with UV-Raman Measurement and Edge Force Model Calculation. Japanese Journal of Applied Physics, 50 (1) 10111 doi:10.7567/jjap.50.010111
Plain TextTomita, Motohiro, Kosemura, Daisuke, Takei, Munehisa, Nagata, Kohki, Akamatsu, Hiroaki, Ogura, Atsushi (2011) Evaluation of Strained-Silicon by Electron Backscattering Pattern Measurement: Comparison Study with UV-Raman Measurement and Edge Force Model Calculation. Japanese Journal of Applied Physics, 50 (1) 10111 doi:10.7567/jjap.50.010111
In(2011, January) Japanese Journal of Applied Physics Vol. 50 (1) Japan Society of Applied Physics

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Tomita, Motohiro, Kosemura, Daisuke, Takei, Munehisa, Nagata, Kohki, Akamatsu, Hiroaki, Ogura, Atsushi (2011) Evaluation of Strained-Silicon by Electron Backscattering Pattern Measurement: Comparison Study with UV-Raman Measurement and Edge Force Model Calculation. Japanese Journal of Applied Physics, 50. 10111 doi:10.1143/jjap.50.010111
Tomita, Motohiro, Kosemura, Daisuke, Takei, Munehisa, Nagata, Kohki, Akamatsu, Hiroaki, Ogura, Atsushi (2011) Evaluation of Strained Silicon by Electron Back Scattering Pattern Compared with Raman Measurement and Edge Force Model Calculation. Key Engineering Materials, 470. 123-128 doi:10.4028/www.scientific.net/kem.470.123
Takei, Munehisa, Kosemura, Daisuke, Akamatsu, Hiroaki, Nagata, Kohki, Ogura, Atsushi (2011) Improvement of Spatial Resolution in Raman Spectroscopy Selecting Measurement Area by Opaque Material Deposition. Japanese Journal of Applied Physics, 50 (6) 61301 doi:10.7567/jjap.50.061301
Takei, Munehisa, Kosemura, Daisuke, Akamatsu, Hiroaki, Nagata, Kohki, Ogura, Atsushi (2011) Improvement of Spatial Resolution in Raman Spectroscopy Selecting Measurement Area by Opaque Material Deposition. Japanese Journal of Applied Physics, 50 (6) 61301 doi:10.1143/jjap.50.061301
Kosemura, Daisuke, Takei, Munehisa, Nagata, Kohki, Akamatsu, Hiroaki, Shimidzu, Ryosuke, Ogura, Atsushi (2010) Evaluation of Anisotropic Biaxial Stress by Raman Spectroscopy with a High Numerical Aperture Immersion Objective Lens. Japanese Journal of Applied Physics, 49 (4) 4 doi:10.1143/jjap.49.04da21
Takei, Munehisa, Hashiguchi, Hiroki, Yamaguchi, Takuya, Kosemura, Daisuke, Nagata, Kohki, Ogura, Atsushi (2012) Channel Strain Measurement in 32-nm-Node Complementary Metal–Oxide–Semiconductor Field-Effect Transistor by Raman Spectroscopy. Japanese Journal of Applied Physics, 51 (4) 4 doi:10.7567/jjap.51.04da04
Takei, Munehisa, Hashiguchi, Hiroki, Yamaguchi, Takuya, Kosemura, Daisuke, Nagata, Kohki, Ogura, Atsushi (2012) Channel Strain Measurement in 32-nm-Node Complementary Metal–Oxide–Semiconductor Field-Effect Transistor by Raman Spectroscopy. Japanese Journal of Applied Physics, 51. 4 doi:10.1143/jjap.51.04da04
Kosemura, Daisuke, Tomita, Motohiro, Usuda, Koji, Ogura, Atsushi (2012) Evaluation of Anisotropic Strain Relaxation in Strained Silicon-on-Insulator Nanostructure by Oil-Immersion Raman Spectroscopy. Japanese Journal of Applied Physics, 51 (2) 2 doi:10.7567/jjap.51.02ba03
Kosemura, Daisuke, Takei, Munehisa, Nagata, Kohki, Akamatsu, Hiroaki, Kohno, Masayuki, Nishita, Tatsuo, Nakanishi, Toshio, Ogura, Atsushi (2009) Study of Strain Induction for Metal–Oxide–Semiconductor Field-Effect Transistors using Transparent Dummy Gates and Stress Liners. Japanese Journal of Applied Physics, 48 (6) 66508 doi:10.1143/jjap.48.066508
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Kosemura, Daisuke, Tomita, Motohiro, Usuda, Koji, Ogura, Atsushi (2012) Evaluation of Anisotropic Strain Relaxation in Strained Silicon-on-Insulator Nanostructure by Oil-Immersion Raman Spectroscopy. Japanese Journal of Applied Physics, 51 (2) 2 doi:10.1143/jjap.51.02ba03
 
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