Vote for your favorite mineral in #MinCup25! - Pectolite vs. Haüyne
It's a pair of striking blue beauties as #pectolite the uncrushable faces off against #hauyne, the phoenix from volcanic ashes!
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Saito, Hisashi, Matsumoto, Yutaka, Miyamoto, Yasuyuki, Furuya, Kazuhito (2011) Vertical InGaAs Channel Metal–Insulator–Semiconductor Field Effect Transistor with High Current Density. Japanese Journal of Applied Physics, 50 (1) 14102 doi:10.7567/jjap.50.014102

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleVertical InGaAs Channel Metal–Insulator–Semiconductor Field Effect Transistor with High Current Density
JournalJapanese Journal of Applied Physics
AuthorsSaito, HisashiAuthor
Matsumoto, YutakaAuthor
Miyamoto, YasuyukiAuthor
Furuya, KazuhitoAuthor
Year2011 (January 1)Volume50
Issue1
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.50.014102Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15036747Long-form Identifiermindat:1:5:15036747:7
GUID0
Full ReferenceSaito, Hisashi, Matsumoto, Yutaka, Miyamoto, Yasuyuki, Furuya, Kazuhito (2011) Vertical InGaAs Channel Metal–Insulator–Semiconductor Field Effect Transistor with High Current Density. Japanese Journal of Applied Physics, 50 (1) 14102 doi:10.7567/jjap.50.014102
Plain TextSaito, Hisashi, Matsumoto, Yutaka, Miyamoto, Yasuyuki, Furuya, Kazuhito (2011) Vertical InGaAs Channel Metal–Insulator–Semiconductor Field Effect Transistor with High Current Density. Japanese Journal of Applied Physics, 50 (1) 14102 doi:10.7567/jjap.50.014102
In(2011, January) Japanese Journal of Applied Physics Vol. 50 (1) Japan Society of Applied Physics

See Also

These are possibly similar items as determined by title/reference text matching only.

Saito, Hisashi, Matsumoto, Yutaka, Miyamoto, Yasuyuki, Furuya, Kazuhito (2011) Vertical InGaAs Channel Metal–Insulator–Semiconductor Field Effect Transistor with High Current Density. Japanese Journal of Applied Physics, 50. 14102 doi:10.1143/jjap.50.014102
Suwa, Akira, Hasegawa, Takashi, Hino, Takahiro, Saito, Hisashi, Oono, Masaya, Miyamoto, Yasuyuki, Furuya, Kazuhito (2007) InP/InGaAs Hot Electron Transistors with Insulated Gate. Japanese Journal of Applied Physics, 46. doi:10.1143/jjap.46.l617
Omura, Yasuhisa (2011) Design Feasibility of High-Performance Si Wire Gate-All-Around Metal–Oxide–Semiconductor Field-Effect Transistor in Sub-30-nm-Channel Regime. Japanese Journal of Applied Physics, 50 (1) 14201 doi:10.7567/jjap.50.014201
Takagi, Shinichi, Takenaka, Mitsuru (2011) Physical Origin of Drive Current Enhancement in Ultrathin Ge-on-Insulator n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Full Ballistic Transport. Japanese Journal of Applied Physics, 50 (1) 10110 doi:10.7567/jjap.50.010110
Osaki, Yuji, Hirose, Tetsuya, Kuroki, Nobutaka, Numa, Masahiro (2011) Temperature-Compensated Nano-Ampere Current Reference Circuit with Subthreshold Metal–Oxide–Semiconductor Field-Effect Transistor Resistor Ladder. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.7567/jjap.50.04de08
Machida, Nobuya, Miyamoto, Yasuyuki, Furuya, Kazuhito (2006) Charging Time of Double-Layer Emitter in Heterojunction Bipolar Transistor Based on Transmission Formalism. Japanese Journal of Applied Physics, 45. doi:10.1143/jjap.45.l935
Maezawa, Koichi, Mizutani, Takashi (1991) High-Frequency Characteristics of Charge-Injection Transistor-Mode Operation in AlGaAs/InGaAs/GaAs Metal-Insulator-Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, 30. 1190-1193 doi:10.1143/jjap.30.1190
Arai, Toshiki, Harada, Yoshimichi, Yamagami, Shigeharu, Miyamoto, Yasuyuki, Furuya, Kazuhito (2000) First Fabrication of GaInAs/InP Buried Metal Heterojunction Bipolar Transistor and Reduction of Base-Collector Capacitance. Japanese Journal of Applied Physics, 39. doi:10.1143/jjap.39.l503
Oobo, Takashi, Takemura, Riichiro, Suhara, Michihiko, Miyamoto, Yasuyuki, Furuya, Kazuhito (1997) High Peak-to-Valley Current Ratio GaInAs/GaInP Resonant Tunneling Diodes. Japanese Journal of Applied Physics, 36. 5079-5080 doi:10.1143/jjap.36.5079
Zhang, Guohe, Chen, Kebin, Liang, Feng (2012) A Subthreshold Current Model of Fully-Depleted Silicon-on-Insulator Metal–Oxide–Semiconductor Field Effect Transistors with Vertical Gaussian Profile. Japanese Journal of Applied Physics, 51 (2) 24301 doi:10.7567/jjap.51.024301
Omura, Yasuhisa (2011) Design Feasibility of High-Performance Si Wire Gate-All-Around Metal–Oxide–Semiconductor Field-Effect Transistor in Sub-30-nm-Channel Regime. Japanese Journal of Applied Physics, 50. 14201 doi:10.1143/jjap.50.014201
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 17, 2025 10:58:29
Go to top of page