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Martinie, Sébastien, Munteanu, Daniela, Carval, Gilles Le, Dura, Julien, Jaud, Marie-Anne, Barraud, Sylvain, Autran, Jean-Luc (2011) Impact of (Quasi-)Ballistic Transport on Operation of Complementary Metal–Oxide–Semiconductor Inverters Based on Fully-Depleted Silicon-on-Insulator and Nanowire Devices. Japanese Journal of Applied Physics, 50 (1) 14103 doi:10.7567/jjap.50.014103

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Reference TypeJournal (article/letter/editorial)
TitleImpact of (Quasi-)Ballistic Transport on Operation of Complementary Metal–Oxide–Semiconductor Inverters Based on Fully-Depleted Silicon-on-Insulator and Nanowire Devices
JournalJapanese Journal of Applied Physics
AuthorsMartinie, SébastienAuthor
Munteanu, DanielaAuthor
Carval, Gilles LeAuthor
Dura, JulienAuthor
Jaud, Marie-AnneAuthor
Barraud, SylvainAuthor
Autran, Jean-LucAuthor
Year2011 (January 1)Volume50
Issue1
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.50.014103Search in ResearchGate
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Mindat Ref. ID15036748Long-form Identifiermindat:1:5:15036748:4
GUID0
Full ReferenceMartinie, Sébastien, Munteanu, Daniela, Carval, Gilles Le, Dura, Julien, Jaud, Marie-Anne, Barraud, Sylvain, Autran, Jean-Luc (2011) Impact of (Quasi-)Ballistic Transport on Operation of Complementary Metal–Oxide–Semiconductor Inverters Based on Fully-Depleted Silicon-on-Insulator and Nanowire Devices. Japanese Journal of Applied Physics, 50 (1) 14103 doi:10.7567/jjap.50.014103
Plain TextMartinie, Sébastien, Munteanu, Daniela, Carval, Gilles Le, Dura, Julien, Jaud, Marie-Anne, Barraud, Sylvain, Autran, Jean-Luc (2011) Impact of (Quasi-)Ballistic Transport on Operation of Complementary Metal–Oxide–Semiconductor Inverters Based on Fully-Depleted Silicon-on-Insulator and Nanowire Devices. Japanese Journal of Applied Physics, 50 (1) 14103 doi:10.7567/jjap.50.014103
In(2011, January) Japanese Journal of Applied Physics Vol. 50 (1) Japan Society of Applied Physics

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Martinie, Sébastien, Munteanu, Daniela, Le Carval, Gilles, Dura, Julien, Jaud, Marie-Anne, Barraud, Sylvain, Autran, Jean-Luc (2011) Impact of (Quasi-)Ballistic Transport on Operation of Complementary Metal–Oxide–Semiconductor Inverters Based on Fully-Depleted Silicon-on-Insulator and Nanowire Devices. Japanese Journal of Applied Physics, 50. 14103 doi:10.1143/jjap.50.014103
Munteanu, Daniela, Autran, Jean-Luc, Moreau, Mathieu (2011) Quantum Compact Model of Drain Current in Independent Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, 50 (2) 24301 doi:10.7567/jjap.50.024301
Munteanu, Daniela, Autran, Jean-Luc, Moreau, Mathieu (2011) Quantum Compact Model of Drain Current in Independent Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, 50 (2) 24301 doi:10.1143/jjap.50.024301
Loussier, Xavier, Munteanu, Daniela, Autran, Jean-Luc, Tintori, Olivier (2008) Impact of Geometrical and Electrical Parameters on Speed Performance Characteristics in Ultimate Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, 47 (5) 3390-3395 doi:10.1143/jjap.47.3390
Dura, J., Triozon, F., Barraud, S., Munteanu, D., Martinie, S., Autran, J. L. (2012) Kubo-Greenwood approach for the calculation of mobility in gate-all-around nanowire metal-oxide-semiconductor field-effect transistors including screened remote Coulomb scattering—Comparison with experiment. Journal of Applied Physics, 111 (10). 103710pp. doi:10.1063/1.4719081
Takagi, Shinichi, Takenaka, Mitsuru (2011) Physical Origin of Drive Current Enhancement in Ultrathin Ge-on-Insulator n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Full Ballistic Transport. Japanese Journal of Applied Physics, 50 (1) 10110 doi:10.7567/jjap.50.010110
Ohtou, Tetsu, Nagumo, Toshiharu, Hiramoto, Toshiro (2004) Variable Body Effect Factor Fully Depleted Silicon-On-Insulator Metal Oxide Semiconductor Field Effect Transistor for Ultra Low-Power Variable-Threshold-Voltage Complementary Metal Oxide Semiconductor Applications. Japanese Journal of Applied Physics, 43 (6) 3311-3314 doi:10.1143/jjap.43.3311
Zhang, Guohe, Chen, Kebin, Liang, Feng (2012) A Subthreshold Current Model of Fully-Depleted Silicon-on-Insulator Metal–Oxide–Semiconductor Field Effect Transistors with Vertical Gaussian Profile. Japanese Journal of Applied Physics, 51 (2) 24301 doi:10.7567/jjap.51.024301
Moreau, Mathieu, Munteanu, Daniela, Autran, Jean-Luc (2008) Simulation Analysis of Quantum Confinement and Short-Channel Effects in Independent Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, 47 (9) 7013-7018 doi:10.1143/jjap.47.7013
Elahipanah, Hossein, Orouji, Ali A. (2009) A Novel Step-Doping Fully-Depleted Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor for Reliable Deep Sub-micron Devices. Japanese Journal of Applied Physics, 48 (11) 114503 doi:10.1143/jjap.48.114503
Cheng, Weitao, Teramoto, Akinobu, Hirayama, Masaki, Sugawa, Shigetoshi, Ohmi, Tadahiro (2006) Impact of Improved High-Performance Si(110)-Oriented Metal–Oxide–Semiconductor Field-Effect Transistors Using Accumulation-Mode Fully Depleted Silicon-on-Insulator Devices. Japanese Journal of Applied Physics, 45 (4) 3110-3116 doi:10.1143/jjap.45.3110
 
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