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Watanabe, Kentaroh, Wada, Kensuke, Kaneda, Hidehiro, Ide, Kensuke, Kato, Masahiro, Wada, Takehiko (2011) Microscopy and Electrical Properties of Ge/Ge Interfaces Bonded by Surface-Activated Wafer Bonding Technology. Japanese Journal of Applied Physics, 50 (1) 15701 doi:10.7567/jjap.50.015701

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Reference TypeJournal (article/letter/editorial)
TitleMicroscopy and Electrical Properties of Ge/Ge Interfaces Bonded by Surface-Activated Wafer Bonding Technology
JournalJapanese Journal of Applied Physics
AuthorsWatanabe, KentarohAuthor
Wada, KensukeAuthor
Kaneda, HidehiroAuthor
Ide, KensukeAuthor
Kato, MasahiroAuthor
Wada, TakehikoAuthor
Year2011 (January 1)Volume50
Issue1
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.50.015701Search in ResearchGate
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Mindat Ref. ID15036761Long-form Identifiermindat:1:5:15036761:3
GUID0
Full ReferenceWatanabe, Kentaroh, Wada, Kensuke, Kaneda, Hidehiro, Ide, Kensuke, Kato, Masahiro, Wada, Takehiko (2011) Microscopy and Electrical Properties of Ge/Ge Interfaces Bonded by Surface-Activated Wafer Bonding Technology. Japanese Journal of Applied Physics, 50 (1) 15701 doi:10.7567/jjap.50.015701
Plain TextWatanabe, Kentaroh, Wada, Kensuke, Kaneda, Hidehiro, Ide, Kensuke, Kato, Masahiro, Wada, Takehiko (2011) Microscopy and Electrical Properties of Ge/Ge Interfaces Bonded by Surface-Activated Wafer Bonding Technology. Japanese Journal of Applied Physics, 50 (1) 15701 doi:10.7567/jjap.50.015701
In(2011, January) Japanese Journal of Applied Physics Vol. 50 (1) Japan Society of Applied Physics

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Watanabe, Kentaroh, Wada, Kensuke, Kaneda, Hidehiro, Ide, Kensuke, Kato, Masahiro, Wada, Takehiko (2011) Microscopy and Electrical Properties of Ge/Ge Interfaces Bonded by Surface-Activated Wafer Bonding Technology. Japanese Journal of Applied Physics, 50. 15701 doi:10.1143/jjap.50.015701
Kaneda, Hidehiro, Wada, Takehiko, Oyabu, Shinki, Kano, Ryoko, Kiriyama, Yuichi, Hattori, Yasuki, Suzuki, Toyoaki, Ide, Kensuke, Kato, Masahiro, Watanabe, Kentaroh (2011) Electrical and Photoconductive Properties at 1.8 K of Germanium p+–i Junction Device Fabricated by Surface-Activated Wafer Bonding. Japanese Journal of Applied Physics, 50 (6) 66503 doi:10.7567/jjap.50.066503
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Tsuji, Kensuke, Maeda, Tsuyoshi, Wada, Takahiro (2018) Optical properties and electronic structures of Cu2ZnSnS4, Cu2ZnGeS4, and Cu2Zn(Ge,Sn)S4 and Cu2Zn(Ge,Sn)Se4 solid solutions. Japanese Journal of Applied Physics, 57 (8) 8 doi:10.7567/jjap.57.08rc21
Utsumi, Jun, Ide, Kensuke, Ichiyanagi, Yuko (2016) Room temperature bonding of SiO2and SiO2by surface activated bonding method using Si ultrathin films. Japanese Journal of Applied Physics, 55 (2) 26503 doi:10.7567/jjap.55.026503
Sakurada, Yuya, Ota, Yasuyuki, Nishioka, Kensuke (2011) Simulation of Temperature Characteristics of InGaP/InGaAs/Ge Triple-Junction Solar Cell under Concentrated Light. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.7567/jjap.50.04dp13
Wada, Kensuke, Kakimoto, Ken-ichi, Ohsato, Hitoshi (2003) Grain-Orientation Control and Microwave Dielectric Properties of Ba4Sm9.33Ti18O54Ceramics. Japanese Journal of Applied Physics, 42. 6149-6153 doi:10.1143/jjap.42.6149
Suzuki, Akifumi, Ueda, Kensuke, Goka, Shigeyoshi, Wada, Keiji, Kakio, Shoji (2016) Multiplex transmission system for gate drive signals of inverter circuit using surface acoustic wave filters. Japanese Journal of Applied Physics, 55 (7) 7 doi:10.7567/jjap.55.07kd01
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