Geng, Huiyuan, Yamaguchi, A Atsushi, Sunakawa, Haruo, Sumi, Norihiko, Yamamoto, Kazutomi, Usui, Akira (2011) Residual Strain Evaluation by Cross-Sectional Micro-Reflectance Spectroscopy of Freestanding GaN Grown by Hydride Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 50 (1) 1 doi:10.7567/jjap.50.01ac01
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Residual Strain Evaluation by Cross-Sectional Micro-Reflectance Spectroscopy of Freestanding GaN Grown by Hydride Vapor Phase Epitaxy | ||
| Journal | Japanese Journal of Applied Physics | ||
| Authors | Geng, Huiyuan | Author | |
| Yamaguchi, A Atsushi | Author | ||
| Sunakawa, Haruo | Author | ||
| Sumi, Norihiko | Author | ||
| Yamamoto, Kazutomi | Author | ||
| Usui, Akira | Author | ||
| Year | 2011 (January 1) | Volume | 50 |
| Issue | 1 | ||
| Publisher | Japan Society of Applied Physics | ||
| DOI | doi:10.7567/jjap.50.01ac01Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 15036791 | Long-form Identifier | mindat:1:5:15036791:0 |
| GUID | 0 | ||
| Full Reference | Geng, Huiyuan, Yamaguchi, A Atsushi, Sunakawa, Haruo, Sumi, Norihiko, Yamamoto, Kazutomi, Usui, Akira (2011) Residual Strain Evaluation by Cross-Sectional Micro-Reflectance Spectroscopy of Freestanding GaN Grown by Hydride Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 50 (1) 1 doi:10.7567/jjap.50.01ac01 | ||
| Plain Text | Geng, Huiyuan, Yamaguchi, A Atsushi, Sunakawa, Haruo, Sumi, Norihiko, Yamamoto, Kazutomi, Usui, Akira (2011) Residual Strain Evaluation by Cross-Sectional Micro-Reflectance Spectroscopy of Freestanding GaN Grown by Hydride Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 50 (1) 1 doi:10.7567/jjap.50.01ac01 | ||
| In | (2011, January) Japanese Journal of Applied Physics Vol. 50 (1) Japan Society of Applied Physics | ||
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