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Fujimoto, Yutaka, Yanagida, Takayuki, Sekiwa, Hideyuki, Yokota, Yuui, Chani, Valery, Yoshikawa, Akira (2011) Scintillation Characteristic of In,Ga-Doped ZnO Thin Films with Different Dopant Concentrations. Japanese Journal of Applied Physics, 50 (1) 1 doi:10.7567/jjap.50.01bg04

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Reference TypeJournal (article/letter/editorial)
TitleScintillation Characteristic of In,Ga-Doped ZnO Thin Films with Different Dopant Concentrations
JournalJapanese Journal of Applied Physics
AuthorsFujimoto, YutakaAuthor
Yanagida, TakayukiAuthor
Sekiwa, HideyukiAuthor
Yokota, YuuiAuthor
Chani, ValeryAuthor
Yoshikawa, AkiraAuthor
Year2011 (January 1)Volume50
Issue1
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.50.01bg04Search in ResearchGate
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Mindat Ref. ID15036890Long-form Identifiermindat:1:5:15036890:0
GUID0
Full ReferenceFujimoto, Yutaka, Yanagida, Takayuki, Sekiwa, Hideyuki, Yokota, Yuui, Chani, Valery, Yoshikawa, Akira (2011) Scintillation Characteristic of In,Ga-Doped ZnO Thin Films with Different Dopant Concentrations. Japanese Journal of Applied Physics, 50 (1) 1 doi:10.7567/jjap.50.01bg04
Plain TextFujimoto, Yutaka, Yanagida, Takayuki, Sekiwa, Hideyuki, Yokota, Yuui, Chani, Valery, Yoshikawa, Akira (2011) Scintillation Characteristic of In,Ga-Doped ZnO Thin Films with Different Dopant Concentrations. Japanese Journal of Applied Physics, 50 (1) 1 doi:10.7567/jjap.50.01bg04
In(2011, January) Japanese Journal of Applied Physics Vol. 50 (1) Japan Society of Applied Physics

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Fujimoto, Yutaka, Yanagida, Takayuki, Sekiwa, Hideyuki, Yokota, Yuui, Chani, Valery, Yoshikawa, Akira (2011) Scintillation Characteristic of In,Ga-Doped ZnO Thin Films with Different Dopant Concentrations. Japanese Journal of Applied Physics, 50. 1 doi:10.1143/jjap.50.01bg04
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