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Wang, Jer-Chyi, Lu, Tseng-Fu, Shih, Hui-Yu, Yang, Chia-Ming, Lai, Chao-Sung, Kao, Chyuan-Haur, Pan, Tung-Ming (2011) pH Sensing Characterization of Programmable Sm2O3/Si3N4/SiO2/Si Electrolyte–Insulator–Semiconductor Sensor with Rapid Thermal Annealing. Japanese Journal of Applied Physics, 50 (10) 10 doi:10.7567/jjap.50.10pg04

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Reference TypeJournal (article/letter/editorial)
TitlepH Sensing Characterization of Programmable Sm2O3/Si3N4/SiO2/Si Electrolyte–Insulator–Semiconductor Sensor with Rapid Thermal Annealing
JournalJapanese Journal of Applied Physics
AuthorsWang, Jer-ChyiAuthor
Lu, Tseng-FuAuthor
Shih, Hui-YuAuthor
Yang, Chia-MingAuthor
Lai, Chao-SungAuthor
Kao, Chyuan-HaurAuthor
Pan, Tung-MingAuthor
Year2011 (October 1)Volume50
Issue10
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.50.10pg04Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15037143Long-form Identifiermindat:1:5:15037143:6
GUID0
Full ReferenceWang, Jer-Chyi, Lu, Tseng-Fu, Shih, Hui-Yu, Yang, Chia-Ming, Lai, Chao-Sung, Kao, Chyuan-Haur, Pan, Tung-Ming (2011) pH Sensing Characterization of Programmable Sm2O3/Si3N4/SiO2/Si Electrolyte–Insulator–Semiconductor Sensor with Rapid Thermal Annealing. Japanese Journal of Applied Physics, 50 (10) 10 doi:10.7567/jjap.50.10pg04
Plain TextWang, Jer-Chyi, Lu, Tseng-Fu, Shih, Hui-Yu, Yang, Chia-Ming, Lai, Chao-Sung, Kao, Chyuan-Haur, Pan, Tung-Ming (2011) pH Sensing Characterization of Programmable Sm2O3/Si3N4/SiO2/Si Electrolyte–Insulator–Semiconductor Sensor with Rapid Thermal Annealing. Japanese Journal of Applied Physics, 50 (10) 10 doi:10.7567/jjap.50.10pg04
In(2011, October) Japanese Journal of Applied Physics Vol. 50 (10) Japan Society of Applied Physics

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Wang, Jer-Chyi, Lu, Tseng-Fu, Shih, Hui-Yu, Yang, Chia-Ming, Lai, Chao-Sung, Kao, Chyuan-Haur, Pan, Tung-Ming (2011) pH Sensing Characterization of Programmable Sm$_{2}$O$_{3}$/Si$_{3}$N$_{4}$/SiO$_{2}$/Si Electrolyte–Insulator–Semiconductor Sensor with Rapid Thermal Annealing. Japanese Journal of Applied Physics, 50 (10) 10 doi:10.1143/jjap.50.10pg04
Wang, Jer-Chyi, Lu, Tseng-Fu, Shih, Hui-Yu, Yang, Chia-Ming, Lai, Chao-Sung, Kao, Chyuan-Haur, Pan, Tung-Ming (2011) Reference Electrode–Insulator–Nitride–Oxide–Semiconductor Structure with Sm2O3Sensing Membrane for pH-Sensor Application. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.7567/jjap.50.04dl09
Wang, Jer-Chyi, Lu, Tseng-Fu, Shih, Hui-Yu, Yang, Chia-Ming, Lai, Chao-Sung, Kao, Chyuan-Haur, Pan, Tung-Ming (2011) Reference Electrode–Insulator–Nitride–Oxide–Semiconductor Structure with Sm2O3Sensing Membrane for pH-Sensor Application. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.1143/jjap.50.04dl09
Lu, Tseng-Fu, Chuang, Hao-Chun, Wang, Jer-Chyi, Yang, Chia-Ming, Kuo, Pei-Chun, Lai, Chao-Sung (2011) Effects of Thickness Effect and Rapid Thermal Annealing on pH Sensing Characteristics of Thin HfO2Films Formed by Atomic Layer Deposition. Japanese Journal of Applied Physics, 50 (10) 10 doi:10.7567/jjap.50.10pg03
Lu, Tseng-Fu, Chuang, Hao-Chun, Wang, Jer-Chyi, Yang, Chia-Ming, Kuo, Pei-Chun, Lai, Chao-Sung (2011) Effects of Thickness Effect and Rapid Thermal Annealing on pH Sensing Characteristics of Thin HfO$_{2}$ Films Formed by Atomic Layer Deposition. Japanese Journal of Applied Physics, 50 (10) 10 doi:10.1143/jjap.50.10pg03
Chin, Chi-Hang, Lu, Tseng-Fu, Wang, Jer-Chyi, Yang, Jung-Hsiang, Lue, Cheng-En, Yang, Chia-Ming, Li, Sheng-Shian, Lai, Chao-Sung (2011) Effects of CF4Plasma Treatment on pH and pNa Sensing Properties of Light-Addressable Potentiometric Sensor with a 2-nm-Thick Sensitive HfO2Layer Grown by Atomic Layer Deposition. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.7567/jjap.50.04dl06
Lai, Chao-Sung, Yang, Chia-Ming, Lu, Tseng-Fu (2006) Thickness Effects on pH Response of HfO2Sensing Dielectric Improved by Rapid Thermal Annealing. Japanese Journal of Applied Physics, 45 (4) 3807-3810 doi:10.1143/jjap.45.3807
Chin, Chi-Hang, Lu, Tseng-Fu, Wang, Jer-Chyi, Yang, Jung-Hsiang, Lue, Cheng-En, Yang, Chia-Ming, Li, Sheng-Shian, Lai, Chao-Sung (2011) Effects of CF4Plasma Treatment on pH and pNa Sensing Properties of Light-Addressable Potentiometric Sensor with a 2-nm-Thick Sensitive HfO2Layer Grown by Atomic Layer Deposition. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.1143/jjap.50.04dl06
Lee, Ming Ling, Wang, Jer Chyi, Kao, Chyuan Haur, Chen, Hsiang, Lin, Chan Yu, Chang, Che Wei, Mahanty, Rama Krushna, Lin, Chun Fu, Chang, Kow Ming (2018) Comparison of ZnO and Ti-doped ZnO sensing membrane applied in electrolyte-insulator-semiconductor structure. Ceramics International, 44. 6081-6088 doi:10.1016/j.ceramint.2017.12.239
Lue, Cheng-En, Lai, Chao-Sung, Wang, Jer-Chyi, Wu, Ching-Mie, Yang, Chia-Ming (2010) Differential Light Addressable Potentiometric Sensor with Poly(vinyl chloride) and HfO2Membranes for pH Sensors. Japanese Journal of Applied Physics, 49 (4) 4 doi:10.1143/jjap.49.04dl10
Fu, Yi, Kao, Chyuan-Haur, Chan, Ya-Ting, Chu, Tzu-Ming, Wang, Jer-Chyi (2019) Multilevel resistive switching behaviors of N2-plasma-treated stacked GdO x /SiN x RRAMs. Japanese Journal of Applied Physics, 58. doi:10.7567/1347-4065/ab03c7
 
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