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Kagaya, Munehito, Corfdir, Pierre, Ganière, Jean-Daniel, Deveaud-Plédran, Benoît, Grandjean, Nicolas, Chichibu, Shigefusa F. (2011) Implementation of Spatio-Time-Resolved Cathodoluminescence Spectroscopy for Studying Local Carrier Dynamics in a Low Dislocation Densitym-Plane In0.05Ga0.95N Epilayer Grown on a Freestanding GaN Substrate. Japanese Journal of Applied Physics, 50 (11) 111002 doi:10.7567/jjap.50.111002

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Reference TypeJournal (article/letter/editorial)
TitleImplementation of Spatio-Time-Resolved Cathodoluminescence Spectroscopy for Studying Local Carrier Dynamics in a Low Dislocation Densitym-Plane In0.05Ga0.95N Epilayer Grown on a Freestanding GaN Substrate
JournalJapanese Journal of Applied Physics
AuthorsKagaya, MunehitoAuthor
Corfdir, PierreAuthor
Ganière, Jean-DanielAuthor
Deveaud-Plédran, BenoîtAuthor
Grandjean, NicolasAuthor
Chichibu, Shigefusa F.Author
Year2011 (November 1)Volume50
Issue11
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.50.111002Search in ResearchGate
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Mindat Ref. ID15037182Long-form Identifiermindat:1:5:15037182:5
GUID0
Full ReferenceKagaya, Munehito, Corfdir, Pierre, Ganière, Jean-Daniel, Deveaud-Plédran, Benoît, Grandjean, Nicolas, Chichibu, Shigefusa F. (2011) Implementation of Spatio-Time-Resolved Cathodoluminescence Spectroscopy for Studying Local Carrier Dynamics in a Low Dislocation Densitym-Plane In0.05Ga0.95N Epilayer Grown on a Freestanding GaN Substrate. Japanese Journal of Applied Physics, 50 (11) 111002 doi:10.7567/jjap.50.111002
Plain TextKagaya, Munehito, Corfdir, Pierre, Ganière, Jean-Daniel, Deveaud-Plédran, Benoît, Grandjean, Nicolas, Chichibu, Shigefusa F. (2011) Implementation of Spatio-Time-Resolved Cathodoluminescence Spectroscopy for Studying Local Carrier Dynamics in a Low Dislocation Densitym-Plane In0.05Ga0.95N Epilayer Grown on a Freestanding GaN Substrate. Japanese Journal of Applied Physics, 50 (11) 111002 doi:10.7567/jjap.50.111002
In(2011, November) Japanese Journal of Applied Physics Vol. 50 (11) Japan Society of Applied Physics

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Kagaya, Munehito, Corfdir, Pierre, Ganière, Jean-Daniel, Deveaud-Plédran, Benoît, Grandjean, Nicolas, Chichibu, Shigefusa F. (2011) Implementation of Spatio-Time-Resolved Cathodoluminescence Spectroscopy for Studying Local Carrier Dynamics in a Low Dislocation Density $m$-Plane In$_{0.05}$Ga$_{0.95}$N Epilayer Grown on a Freestanding GaN Substrate. Japanese Journal of Applied Physics, 50. 111002 doi:10.1143/jjap.50.111002
Corfdir, Pierre, Simeonov, Dobri, Feltin, Eric, Carlin, Jean-François, Lefebvre, Pierre, Grandjean, Nicolas, Deveaud-Plédran, Benoît, Ganière, Jean-Daniel (2011) Time-resolved cathodoluminescence on polychromatic light emitting (In,Ga)N quantum wells grown on (11-22) GaN facets. physica status solidi (c), 8 (4). 1394-1397 doi:10.1002/pssc.201084005
Corfdir, P., Ristić, J., Lefebvre, P., Zhu, T., Martin, D., Dussaigne, A., Ganière, J. D., Grandjean, N., Deveaud-Plédran, B. (2009) Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN. Applied Physics Letters, 94 (20). 201115pp. doi:10.1063/1.3142396
Furusawa, Kentaro, Ishikawa, Yoichi, Ikeda, Hirotaka, Fujito, Kenji, Chichibu, Shigefusa F. (2015) Local excitation and emission dynamics of an isolated single basal-plane stacking-fault in GaN studied by spatio-time-resolved cathodoluminescence. Japanese Journal of Applied Physics, 54 (3) 30303 doi:10.7567/jjap.54.030303
Kojima, Kazunobu, Kagaya, Daiki, Yamazaki, Yoshiki, Ikeda, Hirotaka, Fujito, Kenji, Chichibu, Shigefusa F. (2016) Spectroscopic ellipsometry studies on them-plane Al1−xInxN epilayers grown by metalorganic vapor phase epitaxy on a freestanding GaN substrate. Japanese Journal of Applied Physics, 55 (5) 5 doi:10.7567/jjap.55.05fg04
Corfdir, P, Lefebvre, P, Dussaigne, A, Balet, L, Sonderegger, S, Zhu, T, Martin, D, Ganière, J-D, Grandjean, N, Deveaud-Plédran, B (2011) Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Dynamics in α-Plane (Al,Ga)N/GaN Quantum Wells. Microscopy and Microanalysis, 17. 1868-1869 doi:10.1017/s143192761101021x
Corfdir, P., Lefebvre, P., Balet, L., Sonderegger, S., Dussaigne, A., Zhu, T., Martin, D., Ganière, J.-D., Grandjean, N., Deveaud-Plédran, B. (2010) Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence. Journal of Applied Physics, 107 (4). 43524pp. doi:10.1063/1.3305336
Sonderegger, S, Corfdir, P, Balet, L, Zhu, T, Dussaigne, A, Martin, D, Ristić, J, Lefebvre, P, Ganière, J-D, Grandjean, N, Deveaud-Plédran, B (2010) Novel Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Recombination Dynamics in GaN and GaN Based Heterostructures. Microscopy and Microanalysis, 16. 500-501 doi:10.1017/s1431927610058162
Corfdir, P., Lefebvre, P., Ristić, J., Valvin, P., Calleja, E., Trampert, A., Ganière, J.-D., Deveaud-Plédran, B. (2009) Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates. Journal of Applied Physics, 105 (1). 13113pp. doi:10.1063/1.3062742
Corfdir, P., Dussaigne, A., Teisseyre, H., Suski, T., Grzegory, I., Lefebvre, P., Giraud, E., Ganière, J.-D., Grandjean, N., Deveaud-Plédran, B. (2012) Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN. Journal of Applied Physics, 111 (3). 33517pp. doi:10.1063/1.3681816
Corfdir, P., Lefebvre, P., Levrat, J., Dussaigne, A., Ganière, J.-D., Martin, D, Ristić, J., Zhu, T., Grandjean, N., Deveaud-Plédran, B. (2009) Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy. Journal of Applied Physics, 105 (4). 43102pp. doi:10.1063/1.3075596
 
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