Ueda, Takeji, Soh, Yuki, Nagai, Naomi, Komiyama, Susumu, Kubota, Hiroshi (2011) Charge-Sensitive Infrared Phototransistors Developed in the Wavelength Range of 10–50 µm. Japanese Journal of Applied Physics, 50 (2) 20208 doi:10.1143/jjap.50.020208
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Charge-Sensitive Infrared Phototransistors Developed in the Wavelength Range of 10–50 µm | ||
| Journal | Japanese Journal of Applied Physics | ||
| Authors | Ueda, Takeji | Author | |
| Soh, Yuki | Author | ||
| Nagai, Naomi | Author | ||
| Komiyama, Susumu | Author | ||
| Kubota, Hiroshi | Author | ||
| Year | 2011 (February 7) | Volume | 50 |
| Issue | 2 | ||
| Publisher | Japan Society of Applied Physics | ||
| DOI | doi:10.1143/jjap.50.020208Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 15037324 | Long-form Identifier | mindat:1:5:15037324:9 |
| GUID | 0 | ||
| Full Reference | Ueda, Takeji, Soh, Yuki, Nagai, Naomi, Komiyama, Susumu, Kubota, Hiroshi (2011) Charge-Sensitive Infrared Phototransistors Developed in the Wavelength Range of 10–50 µm. Japanese Journal of Applied Physics, 50 (2) 20208 doi:10.1143/jjap.50.020208 | ||
| Plain Text | Ueda, Takeji, Soh, Yuki, Nagai, Naomi, Komiyama, Susumu, Kubota, Hiroshi (2011) Charge-Sensitive Infrared Phototransistors Developed in the Wavelength Range of 10–50 µm. Japanese Journal of Applied Physics, 50 (2) 20208 doi:10.1143/jjap.50.020208 | ||
| In | (2011, February) Japanese Journal of Applied Physics Vol. 50 (2) Japan Society of Applied Physics | ||
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