Shima, Akio, Sugii, Nobuyuki, Mise, Nobuyuki, Hisamoto, Digh, Takeda, Ken-ichi, Torii, Kazuyoshi (2011) Metal Schottky Source/Drain Technology for Ultrathin Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.1143/jjap.50.04dc06
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Metal Schottky Source/Drain Technology for Ultrathin Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors | ||
| Journal | Japanese Journal of Applied Physics | ||
| Authors | Shima, Akio | Author | |
| Sugii, Nobuyuki | Author | ||
| Mise, Nobuyuki | Author | ||
| Hisamoto, Digh | Author | ||
| Takeda, Ken-ichi | Author | ||
| Torii, Kazuyoshi | Author | ||
| Year | 2011 (April 20) | Volume | 50 |
| Issue | 4 | ||
| Publisher | Japan Society of Applied Physics | ||
| DOI | doi:10.1143/jjap.50.04dc06Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 15037679 | Long-form Identifier | mindat:1:5:15037679:0 |
| GUID | 0 | ||
| Full Reference | Shima, Akio, Sugii, Nobuyuki, Mise, Nobuyuki, Hisamoto, Digh, Takeda, Ken-ichi, Torii, Kazuyoshi (2011) Metal Schottky Source/Drain Technology for Ultrathin Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.1143/jjap.50.04dc06 | ||
| Plain Text | Shima, Akio, Sugii, Nobuyuki, Mise, Nobuyuki, Hisamoto, Digh, Takeda, Ken-ichi, Torii, Kazuyoshi (2011) Metal Schottky Source/Drain Technology for Ultrathin Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.1143/jjap.50.04dc06 | ||
| In | (2011, April) Japanese Journal of Applied Physics Vol. 50 (4) Japan Society of Applied Physics | ||
See Also
These are possibly similar items as determined by title/reference text matching only.
