Chen, Chin-Hsiang, Tsai, Yu-Hsuan, Tsai, Sung-Yi, Cheng, Chung-Fu (2011) GaN-Based Metal–Semiconductor–Metal Ultraviolet Photodetectors with the ZrO2Insulating Layer. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.7567/jjap.50.04dg19
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | GaN-Based Metal–Semiconductor–Metal Ultraviolet Photodetectors with the ZrO2Insulating Layer | ||
Journal | Japanese Journal of Applied Physics | ||
Authors | Chen, Chin-Hsiang | Author | |
Tsai, Yu-Hsuan | Author | ||
Tsai, Sung-Yi | Author | ||
Cheng, Chung-Fu | Author | ||
Year | 2011 (April 1) | Volume | 50 |
Issue | 4 | ||
Publisher | Japan Society of Applied Physics | ||
DOI | doi:10.7567/jjap.50.04dg19Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 15037992 | Long-form Identifier | mindat:1:5:15037992:0 |
GUID | 0 | ||
Full Reference | Chen, Chin-Hsiang, Tsai, Yu-Hsuan, Tsai, Sung-Yi, Cheng, Chung-Fu (2011) GaN-Based Metal–Semiconductor–Metal Ultraviolet Photodetectors with the ZrO2Insulating Layer. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.7567/jjap.50.04dg19 | ||
Plain Text | Chen, Chin-Hsiang, Tsai, Yu-Hsuan, Tsai, Sung-Yi, Cheng, Chung-Fu (2011) GaN-Based Metal–Semiconductor–Metal Ultraviolet Photodetectors with the ZrO2Insulating Layer. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.7567/jjap.50.04dg19 | ||
In | (2011, April) Japanese Journal of Applied Physics Vol. 50 (4) Japan Society of Applied Physics |
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