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Minagawa, Masahiro, Sato, Yasuo, Takahashi, Akira, Baba, Akira, Shinbo, Kazunari, Kato, Keizo, Kaneko, Futao (2012) Mechanism behind Improved Apparent Field-Effect Mobility in Pentacene Thin-Film Transistors with Thin Molybdenum Trioxide Layer. Japanese Journal of Applied Physics, 51. 101601 doi:10.1143/jjap.51.101601

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Reference TypeJournal (article/letter/editorial)
TitleMechanism behind Improved Apparent Field-Effect Mobility in Pentacene Thin-Film Transistors with Thin Molybdenum Trioxide Layer
JournalJapanese Journal of Applied Physics
AuthorsMinagawa, MasahiroAuthor
Sato, YasuoAuthor
Takahashi, AkiraAuthor
Baba, AkiraAuthor
Shinbo, KazunariAuthor
Kato, KeizoAuthor
Kaneko, FutaoAuthor
Year2012 (October 4)Volume51
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.51.101601Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15041019Long-form Identifiermindat:1:5:15041019:7
GUID0
Full ReferenceMinagawa, Masahiro, Sato, Yasuo, Takahashi, Akira, Baba, Akira, Shinbo, Kazunari, Kato, Keizo, Kaneko, Futao (2012) Mechanism behind Improved Apparent Field-Effect Mobility in Pentacene Thin-Film Transistors with Thin Molybdenum Trioxide Layer. Japanese Journal of Applied Physics, 51. 101601 doi:10.1143/jjap.51.101601
Plain TextMinagawa, Masahiro, Sato, Yasuo, Takahashi, Akira, Baba, Akira, Shinbo, Kazunari, Kato, Keizo, Kaneko, Futao (2012) Mechanism behind Improved Apparent Field-Effect Mobility in Pentacene Thin-Film Transistors with Thin Molybdenum Trioxide Layer. Japanese Journal of Applied Physics, 51. 101601 doi:10.1143/jjap.51.101601
In(2012) Japanese Journal of Applied Physics Vol. 51. Japan Society of Applied Physics

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