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Lai, Ming-Hui, Sermon Wu, YewChung, Huang, Jung-Jie (2012) Effect of Nickel Concentration on Bias Reliability and Thermal Stability of Thin-Film Transistors Fabricated by Ni-Metal-Induced Crystallization. Japanese Journal of Applied Physics, 51 (1) 11301 doi:10.1143/jjap.51.011301

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Reference TypeJournal (article/letter/editorial)
TitleEffect of Nickel Concentration on Bias Reliability and Thermal Stability of Thin-Film Transistors Fabricated by Ni-Metal-Induced Crystallization
JournalJapanese Journal of Applied Physics
AuthorsLai, Ming-HuiAuthor
Sermon Wu, YewChungAuthor
Huang, Jung-JieAuthor
Year2012 (January)Volume51
Issue1
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.51.011301Search in ResearchGate
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Mindat Ref. ID15041404Long-form Identifiermindat:1:5:15041404:1
GUID0
Full ReferenceLai, Ming-Hui, Sermon Wu, YewChung, Huang, Jung-Jie (2012) Effect of Nickel Concentration on Bias Reliability and Thermal Stability of Thin-Film Transistors Fabricated by Ni-Metal-Induced Crystallization. Japanese Journal of Applied Physics, 51 (1) 11301 doi:10.1143/jjap.51.011301
Plain TextLai, Ming-Hui, Sermon Wu, YewChung, Huang, Jung-Jie (2012) Effect of Nickel Concentration on Bias Reliability and Thermal Stability of Thin-Film Transistors Fabricated by Ni-Metal-Induced Crystallization. Japanese Journal of Applied Physics, 51 (1) 11301 doi:10.1143/jjap.51.011301
In(2012, January) Japanese Journal of Applied Physics Vol. 51 (1) Japan Society of Applied Physics

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Lai, Ming-Hui, Wu, YewChung Sermon, Huang, Jung-Jie (2012) Effect of Nickel Concentration on Bias Reliability and Thermal Stability of Thin-Film Transistors Fabricated by Ni-Metal-Induced Crystallization. Japanese Journal of Applied Physics, 51 (1) 11301 doi:10.7567/jjap.51.011301
Hou, Chih-Yuan, Wu, YewChung Sermon (2006) Performances of Ni-Induced Lateral Crystallization Thin Film Transistors with <111 > and <112 > Needle Grains. Japanese Journal of Applied Physics, 45 (7) 5667-5670 doi:10.1143/jjap.45.5667
Hu, Chen-Ming, Wu, YewChung Sermon (2007) Gettering of Nickel within the Ni-Metal Induced Lateral Crystallization Polycrystalline Silicon Film through the Contact Holes. Japanese Journal of Applied Physics, 46. doi:10.1143/jjap.46.l1188
Hu, Chen-Ming, Wu, Yew Chung Sermon, Gong, Jun-Wei (2007) Comparison of Ni-Metal Induced Lateral Crystallization Thin-Film Transistors Fabricated by Rapid Thermal Annealing and Conventional Furnace Annealing at 565 °C. Japanese Journal of Applied Physics, 46 (11) 7204-7207 doi:10.1143/jjap.46.7204
Chao, Chi-Wei, Wu, Yew Chung Sermon, Hu, Gau-Ren, Feng, Ming-Shian (2003) Device Characteristics of Polysilicon Thin-Film Transistors Fabricated by Electroless Plating Ni-Induced Crystallization of Amorphous Si. Japanese Journal of Applied Physics, 42. 1556-1559 doi:10.1143/jjap.42.1556
Wang, Bau-Ming, Yang, Tzu-Ming, Wu, YewChung Sermon, Su, Chun-Jung, Lin, Horng-Chih (2010) Effect of Ni residues on the performance and the uniformity of nickel-induced lateral crystallization polycrystalline silicon nanowire thin-film transistors. Materials Chemistry and Physics, 124. 880-883 doi:10.1016/j.matchemphys.2010.08.018
Hou, Chih-Yuan, Wu, YewChung Sermon (2005) Effects of Tensile Stress on Growth of Ni–Metal-Induced Lateral Crystallization of Amorphous Silicon. Japanese Journal of Applied Physics, 44 (10) 7327-7331 doi:10.1143/jjap.44.7327
Hsu, Chin-Yuan, Lan, Wen-How, Wu, YewChung Sermon (2006) Thermal Annealing Effect Between Ni Film and Mg-Doped GaN Layer. Japanese Journal of Applied Physics, 45 (8) 6256-6258 doi:10.1143/jjap.45.6256
Hou, Chih-Yuan, Lin, Chi-Ching, Wu, YewChung Sermon (2006) Gettering of Ni from Ni–Metal Induced Lateral Crystallization Polycrystalline Silicon Films Using a Gettering Substrate. Japanese Journal of Applied Physics, 45 (9) 6803-6805 doi:10.1143/jjap.45.6803
Hu, Guo-Ren, Huang, Tian Jiun, Wu, YewChung Sermon (2003) Improved Annealing Process for Electroless Pd Plating Induced Crystallization of Amorphous Silicon. Japanese Journal of Applied Physics, 42. doi:10.1143/jjap.42.l895
Chang, Chih-Pang, Wu, YewChung Sermon (2010) Effect of CF[sub 4] Plasma on Properties and Reliability of Metal-Induced Lateral Crystallization Silicon Transistors. Journal of the Electrochemical Society, 157. doi:10.1149/1.3265989
 
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