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Naritsuka, Shigeya, Mori, Midori, Takeuchi, Yoshitaka, Monno, Yohei, Maruyama, Takahiro (2012) X-ray Photoemission Spectroscopy Study of Low-Temperature Nitridation of GaAs(001) Surface Using RF Radical Source. Japanese Journal of Applied Physics, 51 (1) 15602 doi:10.1143/jjap.51.015602

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Reference TypeJournal (article/letter/editorial)
TitleX-ray Photoemission Spectroscopy Study of Low-Temperature Nitridation of GaAs(001) Surface Using RF Radical Source
JournalJapanese Journal of Applied Physics
AuthorsNaritsuka, ShigeyaAuthor
Mori, MidoriAuthor
Takeuchi, YoshitakaAuthor
Monno, YoheiAuthor
Maruyama, TakahiroAuthor
Year2012 (January)Volume51
Issue1
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.51.015602Search in ResearchGate
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Mindat Ref. ID15041429Long-form Identifiermindat:1:5:15041429:4
GUID0
Full ReferenceNaritsuka, Shigeya, Mori, Midori, Takeuchi, Yoshitaka, Monno, Yohei, Maruyama, Takahiro (2012) X-ray Photoemission Spectroscopy Study of Low-Temperature Nitridation of GaAs(001) Surface Using RF Radical Source. Japanese Journal of Applied Physics, 51 (1) 15602 doi:10.1143/jjap.51.015602
Plain TextNaritsuka, Shigeya, Mori, Midori, Takeuchi, Yoshitaka, Monno, Yohei, Maruyama, Takahiro (2012) X-ray Photoemission Spectroscopy Study of Low-Temperature Nitridation of GaAs(001) Surface Using RF Radical Source. Japanese Journal of Applied Physics, 51 (1) 15602 doi:10.1143/jjap.51.015602
In(2012, January) Japanese Journal of Applied Physics Vol. 51 (1) Japan Society of Applied Physics

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Naritsuka, Shigeya, Mori, Midori, Takeuchi, Yoshitaka, Monno, Yohei, Maruyama, Takahiro (2012) X-ray Photoemission Spectroscopy Study of Low-Temperature Nitridation of GaAs(001) Surface Using RF Radical Source. Japanese Journal of Applied Physics, 51 (1) 15602 doi:10.7567/jjap.51.015602
Naritsuka, Shigeya, Mori, Midori, Takeuchi, Yoshitaka, Maruyama, Takahiro (2012) X-ray Photoemission Spectroscopy Study of GaAs(111)B Substrate Nitridation using an RF-Radical Source. Japanese Journal of Applied Physics, 51. 48004 doi:10.1143/jjap.51.048004
Naritsuka, Shigeya, Mori, Midori, Takeuchi, Yoshitaka, Maruyama, Takahiro (2012) X-ray Photoemission Spectroscopy Study of GaAs(111)B Substrate Nitridation using an RF-Radical Source. Japanese Journal of Applied Physics, 51 (4) 48004 doi:10.7567/jjap.51.048004
Naritsuka, Shigeya, Mori, Midori, Takeuchi, Yoshitaka, Monno, Yohei, Maruyama, Takahiro (2011) XPS study of nitridation mechanism of GaAs (001) surface by RF-radical source. physica status solidi (c), 8 (2). 291-293 doi:10.1002/pssc.201000463
Naritsuka, Shigeya, Mori, Midori, Takeuchi, Yoshitaka, Maruyama, Takahiro (2009) Influence of substrate temperature on nitridation of (001) GaAs using RF-radical source. Journal of Crystal Growth, 311 (10). 2992-2995 doi:10.1016/j.jcrysgro.2009.01.070
Iokawa, Takayasu, Tsutsui, Tomoyuki, Naritsuka, Shigeya, Maruyama, Takahiro (2012) Direct Growth of Carbon Nanotubes on ZnO($000\bar{1}$) Substrate Surface using Alcohol Gas Source Method in High Vacuum. Japanese Journal of Applied Physics, 51 (1) 1 doi:10.1143/jjap.51.01ah04
Fukuoka, Naoya, Mizutani, Yoshihiro, Naritsuka, Shigeya, Maruyama, Takahiro, Iijima, Sumio (2012) Low-Temperature Synthesis of Single-Walled Carbon Nanotubes in a High Vacuum Using Pt Catalyst in Alcohol Gas Source Method. Japanese Journal of Applied Physics, 51. 6 doi:10.1143/jjap.51.06fd23
Iokawa, Takayasu, Tsutsui, Tomoyuki, Naritsuka, Shigeya, Maruyama, Takahiro (2012) Direct Growth of Carbon Nanotubes on ZnO(0001Μ„) Substrate Surface using Alcohol Gas Source Method in High Vacuum. Japanese Journal of Applied Physics, 51 (1) 1 doi:10.7567/jjap.51.01ah04
Fukuoka, Naoya, Mizutani, Yoshihiro, Naritsuka, Shigeya, Maruyama, Takahiro, Iijima, Sumio (2012) Low-Temperature Synthesis of Single-Walled Carbon Nanotubes in a High Vacuum Using Pt Catalyst in Alcohol Gas Source Method. Japanese Journal of Applied Physics, 51 (6) 6 doi:10.7567/jjap.51.06fd23
Mizutani, Mitsuhiro, Teramae, Fumiharu, Takeuchi, Kazutaka, Murase, Tatsunori, Naritsuka, Shigeya, Maruyama, Takahiro (2006) Precise Control of Vertical-Cavity Surface-Emitting Laser Structural Growth Using Molecular Beam EpitaxyIn SituReflectance Monitor. Japanese Journal of Applied Physics, 45 (4) 3552-3555 doi:10.1143/jjap.45.3552
Tomita, Masafumi, Takakura, Hiroyuki, Kambayashi, Daisuke, Mizuno, Yosuke, Naritsuka, Shigeya, Maruyama, Takahiro (2015) Abnormal growth in super-low supersaturation microchannel epitaxy of (001) GaAs and its improvement. Japanese Journal of Applied Physics, 54 (2) 25502 doi:10.7567/jjap.54.025502
 
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