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Lee, Keon-Hun, Shin, In Su, Park, Sung Hyun, Moon, Dae Young, Kim, Minhwa, Park, Jinsub, Nanishi, Yasushi, Yoon, Euijoon (2012) Growth of Less Bowed GaN Epitaxial Layers on Sapphire Substrates by Formation of Low-Temperature GaN Buffer Layer with Columnar Microstructure. Japanese Journal of Applied Physics, 51 (1) 1 doi:10.1143/jjap.51.01af01

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Reference TypeJournal (article/letter/editorial)
TitleGrowth of Less Bowed GaN Epitaxial Layers on Sapphire Substrates by Formation of Low-Temperature GaN Buffer Layer with Columnar Microstructure
JournalJapanese Journal of Applied Physics
AuthorsLee, Keon-HunAuthor
Shin, In SuAuthor
Park, Sung HyunAuthor
Moon, Dae YoungAuthor
Kim, MinhwaAuthor
Park, JinsubAuthor
Nanishi, YasushiAuthor
Yoon, EuijoonAuthor
Year2012 (January 20)Volume51
Issue1
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.51.01af01Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15041476Long-form Identifiermindat:1:5:15041476:8
GUID0
Full ReferenceLee, Keon-Hun, Shin, In Su, Park, Sung Hyun, Moon, Dae Young, Kim, Minhwa, Park, Jinsub, Nanishi, Yasushi, Yoon, Euijoon (2012) Growth of Less Bowed GaN Epitaxial Layers on Sapphire Substrates by Formation of Low-Temperature GaN Buffer Layer with Columnar Microstructure. Japanese Journal of Applied Physics, 51 (1) 1 doi:10.1143/jjap.51.01af01
Plain TextLee, Keon-Hun, Shin, In Su, Park, Sung Hyun, Moon, Dae Young, Kim, Minhwa, Park, Jinsub, Nanishi, Yasushi, Yoon, Euijoon (2012) Growth of Less Bowed GaN Epitaxial Layers on Sapphire Substrates by Formation of Low-Temperature GaN Buffer Layer with Columnar Microstructure. Japanese Journal of Applied Physics, 51 (1) 1 doi:10.1143/jjap.51.01af01
In(2012, January) Japanese Journal of Applied Physics Vol. 51 (1) Japan Society of Applied Physics


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