Tsai, Chun-Fu, Su, Yan-Kuin, Lin, Chun-Liang (2012) Further Improvement in the Light Output Power of InGaN-Based Light Emitting Diodes by Patterned Sapphire Substrate with KOH Wet-Chemical Etching on Sidewall. Japanese Journal of Applied Physics, 51 (1) 1 doi:10.1143/jjap.51.01ag04
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Further Improvement in the Light Output Power of InGaN-Based Light Emitting Diodes by Patterned Sapphire Substrate with KOH Wet-Chemical Etching on Sidewall | ||
Journal | Japanese Journal of Applied Physics | ||
Authors | Tsai, Chun-Fu | Author | |
Su, Yan-Kuin | Author | ||
Lin, Chun-Liang | Author | ||
Year | 2012 (January 20) | Volume | 51 |
Issue | 1 | ||
Publisher | Japan Society of Applied Physics | ||
DOI | doi:10.1143/jjap.51.01ag04Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 15041486 | Long-form Identifier | mindat:1:5:15041486:7 |
GUID | 0 | ||
Full Reference | Tsai, Chun-Fu, Su, Yan-Kuin, Lin, Chun-Liang (2012) Further Improvement in the Light Output Power of InGaN-Based Light Emitting Diodes by Patterned Sapphire Substrate with KOH Wet-Chemical Etching on Sidewall. Japanese Journal of Applied Physics, 51 (1) 1 doi:10.1143/jjap.51.01ag04 | ||
Plain Text | Tsai, Chun-Fu, Su, Yan-Kuin, Lin, Chun-Liang (2012) Further Improvement in the Light Output Power of InGaN-Based Light Emitting Diodes by Patterned Sapphire Substrate with KOH Wet-Chemical Etching on Sidewall. Japanese Journal of Applied Physics, 51 (1) 1 doi:10.1143/jjap.51.01ag04 | ||
In | (2012, January) Japanese Journal of Applied Physics Vol. 51 (1) Japan Society of Applied Physics |
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