Li, Xu, Zhou, Haiping, Hill, Richard J. W., Holland, Martin, Thayne, Iain G. (2012) A Low Damage Etching Process of Sub-100 nm Platinum Gate Line for III–V Metal–Oxide–Semiconductor Field-Effect Transistor Fabrication and the Optical Emission Spectrometry of the Inductively Coupled Plasma of SF6/C4F8. Japanese Journal of Applied Physics, 51 (1) 1 doi:10.7567/jjap.51.01ab01
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | A Low Damage Etching Process of Sub-100 nm Platinum Gate Line for III–V Metal–Oxide–Semiconductor Field-Effect Transistor Fabrication and the Optical Emission Spectrometry of the Inductively Coupled Plasma of SF6/C4F8 | ||
| Journal | Japanese Journal of Applied Physics | ||
| Authors | Li, Xu | Author | |
| Zhou, Haiping | Author | ||
| Hill, Richard J. W. | Author | ||
| Holland, Martin | Author | ||
| Thayne, Iain G. | Author | ||
| Year | 2012 (January 1) | Volume | 51 |
| Issue | 1 | ||
| Publisher | Japan Society of Applied Physics | ||
| DOI | doi:10.7567/jjap.51.01ab01Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 15041598 | Long-form Identifier | mindat:1:5:15041598:7 |
| GUID | 0 | ||
| Full Reference | Li, Xu, Zhou, Haiping, Hill, Richard J. W., Holland, Martin, Thayne, Iain G. (2012) A Low Damage Etching Process of Sub-100 nm Platinum Gate Line for III–V Metal–Oxide–Semiconductor Field-Effect Transistor Fabrication and the Optical Emission Spectrometry of the Inductively Coupled Plasma of SF6/C4F8. Japanese Journal of Applied Physics, 51 (1) 1 doi:10.7567/jjap.51.01ab01 | ||
| Plain Text | Li, Xu, Zhou, Haiping, Hill, Richard J. W., Holland, Martin, Thayne, Iain G. (2012) A Low Damage Etching Process of Sub-100 nm Platinum Gate Line for III–V Metal–Oxide–Semiconductor Field-Effect Transistor Fabrication and the Optical Emission Spectrometry of the Inductively Coupled Plasma of SF6/C4F8. Japanese Journal of Applied Physics, 51 (1) 1 doi:10.7567/jjap.51.01ab01 | ||
| In | (2012, January) Japanese Journal of Applied Physics Vol. 51 (1) Japan Society of Applied Physics | ||
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