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Lozac'h, Mickael, Nakano, Yoshitaka, Sang, Liwen, Sakoda, Kazuaki, Sumiya, Masatomo (2012) Study of Defect Levels in the Band Gap for a Thick InGaN Film. Japanese Journal of Applied Physics, 51 (12) 121001 doi:10.7567/jjap.51.121001

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Reference TypeJournal (article/letter/editorial)
TitleStudy of Defect Levels in the Band Gap for a Thick InGaN Film
JournalJapanese Journal of Applied Physics
AuthorsLozac'h, MickaelAuthor
Nakano, YoshitakaAuthor
Sang, LiwenAuthor
Sakoda, KazuakiAuthor
Sumiya, MasatomoAuthor
Year2012 (December 1)Volume51
Issue12
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.51.121001Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15041983Long-form Identifiermindat:1:5:15041983:1
GUID0
Full ReferenceLozac'h, Mickael, Nakano, Yoshitaka, Sang, Liwen, Sakoda, Kazuaki, Sumiya, Masatomo (2012) Study of Defect Levels in the Band Gap for a Thick InGaN Film. Japanese Journal of Applied Physics, 51 (12) 121001 doi:10.7567/jjap.51.121001
Plain TextLozac'h, Mickael, Nakano, Yoshitaka, Sang, Liwen, Sakoda, Kazuaki, Sumiya, Masatomo (2012) Study of Defect Levels in the Band Gap for a Thick InGaN Film. Japanese Journal of Applied Physics, 51 (12) 121001 doi:10.7567/jjap.51.121001
In(2012, December) Japanese Journal of Applied Physics Vol. 51 (12) Japan Society of Applied Physics

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Lozac'h, Mickael, Nakano, Yoshitaka, Sang, Liwen, Sakoda, Kazuaki, Sumiya, Masatomo (2012) Study of Defect Levels in the Band Gap for a Thick InGaN Film. Japanese Journal of Applied Physics, 51. 121001 doi:10.1143/jjap.51.121001
Lozac'h, Mickaël, Nakano, Yoshitaka, Sang, Liwen, Sakoda, Kazuaki, Sumiya, Masatomo (2013) Fabrication of transparent conducting polymer/GaN Schottky junction for deep level defect evaluation under light irradiation. physica status solidi (a), 210 (3). 470-473 doi:10.1002/pssa.201200716
Lozac'h, Mickaël, Nakano, Yoshitaka, Sang, Liwen, Sakoda, Kazuaki, Sumiya, Masatomo (2013) Front Cover: Fabrication of transparent conducting polymer/GaN Schottky junction for deep level defect evaluation under light irradiation (Phys. Status Solidi A 3/20123). physica status solidi (a), 210 (3). doi:10.1002/pssa.201390006
Nakano, Yoshitaka, Matsuki, Nobuyuki, Irokawa, Yoshihiro, Sumiya, Masatomo (2011) Deep-Level Characterization of n-GaN Epitaxial Layers Using Transparent Conductive Polyaniline Schottky Contacts. Japanese Journal of Applied Physics, 50 (1) 1 doi:10.7567/jjap.50.01ad02
Sang, Liwen, Liao, Meiyong, Koide, Yasuo, Sumiya, Masatomo (2015) InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties. Journal of Applied Physics, 117 (10). 105706pp. doi:10.1063/1.4914908
Sumiya, Masatomo, Honda, Tohru, Sang, Liwen, Nakano, Yoshitaka, Watanabe, Kenji, Hasegawa, Fumio (2015) Improvement of strained InGaN solar cell performance with a heavily doped n+-GaN substrate. physica status solidi (a), 212 (5). 1033-1038 doi:10.1002/pssa.201431732
Uedono, Akira, Watanabe, Tomohito, Kimura, Shogo, Zhang, Yang, Lozac'h, Mickael, Sang, Liwen, Ishibashi, Shoji, Oshima, Nagayasu, Suzuki, Ryoichi, Sumiya, Masatomo (2013) Vacancy-type defects in InxGa1−xN grown on GaN templates probed using monoenergetic positron beams. Journal of Applied Physics, 114 (18). 184504pp. doi:10.1063/1.4830033
Nakano, Yoshitaka, Matsuki, Nobuyuki, Irokawa, Yoshihiro, Sumiya, Masatomo (2011) Deep-Level Characterization of n-GaN Epitaxial Layers Using Transparent Conductive Polyaniline Schottky Contacts. Japanese Journal of Applied Physics, 50. 1 doi:10.1143/jjap.50.01ad02
Sang, Liwen, Liao, Meiyong, Koide, Yasuo, Sumiya, Masatomo (2011) High-temperature ultraviolet detection based on InGaN Schottky photodiodes. Applied Physics Letters, 99 (3). 31115pp. doi:10.1063/1.3615291
Elborg, Martin, Jo, Masafumi, Ding, Yi, Noda, Takeshi, Mano, Takaaki, Sakoda, Kazuaki (2012) Two-Color Photoexcitation in a GaNAs/AlGaAs Quantum Well Solar Cell. Japanese Journal of Applied Physics, 51 (6) 6 doi:10.7567/jjap.51.06ff15
Yamamoto, Yoshitaka (2012) Technological Innovation of Thin-Film Transistors: Technology Development, History, and Future. Japanese Journal of Applied Physics, 51 (6) 60001 doi:10.7567/jjap.51.060001
 
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